JPS5687369A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5687369A JPS5687369A JP16426779A JP16426779A JPS5687369A JP S5687369 A JPS5687369 A JP S5687369A JP 16426779 A JP16426779 A JP 16426779A JP 16426779 A JP16426779 A JP 16426779A JP S5687369 A JPS5687369 A JP S5687369A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- whereon
- diffusing
- sec
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/8312—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16426779A JPS5687369A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16426779A JPS5687369A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5687369A true JPS5687369A (en) | 1981-07-15 |
| JPS6318863B2 JPS6318863B2 (OSRAM) | 1988-04-20 |
Family
ID=15789831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16426779A Granted JPS5687369A (en) | 1979-12-18 | 1979-12-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5687369A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5897872A (ja) * | 1981-12-08 | 1983-06-10 | Nec Corp | 不揮発性半導体記憶装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558078U (OSRAM) * | 1978-07-03 | 1980-01-19 |
-
1979
- 1979-12-18 JP JP16426779A patent/JPS5687369A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558078U (OSRAM) * | 1978-07-03 | 1980-01-19 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5897872A (ja) * | 1981-12-08 | 1983-06-10 | Nec Corp | 不揮発性半導体記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6318863B2 (OSRAM) | 1988-04-20 |
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