JPS6318863B2 - - Google Patents

Info

Publication number
JPS6318863B2
JPS6318863B2 JP54164267A JP16426779A JPS6318863B2 JP S6318863 B2 JPS6318863 B2 JP S6318863B2 JP 54164267 A JP54164267 A JP 54164267A JP 16426779 A JP16426779 A JP 16426779A JP S6318863 B2 JPS6318863 B2 JP S6318863B2
Authority
JP
Japan
Prior art keywords
source
semiconductor
drain
drain regions
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54164267A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5687369A (en
Inventor
Machio Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP16426779A priority Critical patent/JPS5687369A/ja
Publication of JPS5687369A publication Critical patent/JPS5687369A/ja
Publication of JPS6318863B2 publication Critical patent/JPS6318863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8312—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP16426779A 1979-12-18 1979-12-18 Semiconductor device Granted JPS5687369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16426779A JPS5687369A (en) 1979-12-18 1979-12-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16426779A JPS5687369A (en) 1979-12-18 1979-12-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5687369A JPS5687369A (en) 1981-07-15
JPS6318863B2 true JPS6318863B2 (OSRAM) 1988-04-20

Family

ID=15789831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16426779A Granted JPS5687369A (en) 1979-12-18 1979-12-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687369A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897872A (ja) * 1981-12-08 1983-06-10 Nec Corp 不揮発性半導体記憶装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS581051Y2 (ja) * 1978-07-03 1983-01-10 株式会社東芝 鉄道車両用砂散布装置

Also Published As

Publication number Publication date
JPS5687369A (en) 1981-07-15

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