JPS5681993A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS5681993A JPS5681993A JP15911779A JP15911779A JPS5681993A JP S5681993 A JPS5681993 A JP S5681993A JP 15911779 A JP15911779 A JP 15911779A JP 15911779 A JP15911779 A JP 15911779A JP S5681993 A JPS5681993 A JP S5681993A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- active
- clad layer
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15911779A JPS5681993A (en) | 1979-12-10 | 1979-12-10 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15911779A JPS5681993A (en) | 1979-12-10 | 1979-12-10 | Semiconductor laser element |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63175022A Division JPH01199486A (ja) | 1988-07-15 | 1988-07-15 | 半導体レーザー素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5681993A true JPS5681993A (en) | 1981-07-04 |
JPH0211024B2 JPH0211024B2 (enrdf_load_stackoverflow) | 1990-03-12 |
Family
ID=15686603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15911779A Granted JPS5681993A (en) | 1979-12-10 | 1979-12-10 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5681993A (enrdf_load_stackoverflow) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6130090A (ja) * | 1984-07-20 | 1986-02-12 | Nec Corp | 半導体レ−ザ |
JPS6142980A (ja) * | 1984-08-06 | 1986-03-01 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS61102087A (ja) * | 1984-10-25 | 1986-05-20 | Sharp Corp | 半導体レ−ザ装置 |
JPS61163687A (ja) * | 1985-01-12 | 1986-07-24 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS61164292A (ja) * | 1985-01-16 | 1986-07-24 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS61225887A (ja) * | 1985-03-29 | 1986-10-07 | Sharp Corp | 半導体レ−ザアレイ装置 |
US4718069A (en) * | 1986-10-27 | 1988-01-05 | Spectra Diode Laboratories, Inc. | Semiconductor laser array with single lobed output |
JPS6396987A (ja) * | 1986-10-14 | 1988-04-27 | Sony Corp | 半導体レ−ザ |
EP1139527A3 (en) * | 2000-03-27 | 2003-04-23 | Matsushita Electric Industrial Co., Ltd. | High power semiconductor laser array apparatus |
EP2671294B1 (en) * | 2011-01-31 | 2023-11-29 | Technische Universität Berlin | Device comprising a laser |
-
1979
- 1979-12-10 JP JP15911779A patent/JPS5681993A/ja active Granted
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6130090A (ja) * | 1984-07-20 | 1986-02-12 | Nec Corp | 半導体レ−ザ |
JPS6142980A (ja) * | 1984-08-06 | 1986-03-01 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS61102087A (ja) * | 1984-10-25 | 1986-05-20 | Sharp Corp | 半導体レ−ザ装置 |
JPS61163687A (ja) * | 1985-01-12 | 1986-07-24 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS61164292A (ja) * | 1985-01-16 | 1986-07-24 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS61225887A (ja) * | 1985-03-29 | 1986-10-07 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS6396987A (ja) * | 1986-10-14 | 1988-04-27 | Sony Corp | 半導体レ−ザ |
US4718069A (en) * | 1986-10-27 | 1988-01-05 | Spectra Diode Laboratories, Inc. | Semiconductor laser array with single lobed output |
EP1139527A3 (en) * | 2000-03-27 | 2003-04-23 | Matsushita Electric Industrial Co., Ltd. | High power semiconductor laser array apparatus |
EP2671294B1 (en) * | 2011-01-31 | 2023-11-29 | Technische Universität Berlin | Device comprising a laser |
Also Published As
Publication number | Publication date |
---|---|
JPH0211024B2 (enrdf_load_stackoverflow) | 1990-03-12 |
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