JPS5681923A - Manufacture of thin film - Google Patents
Manufacture of thin filmInfo
- Publication number
- JPS5681923A JPS5681923A JP15893379A JP15893379A JPS5681923A JP S5681923 A JPS5681923 A JP S5681923A JP 15893379 A JP15893379 A JP 15893379A JP 15893379 A JP15893379 A JP 15893379A JP S5681923 A JPS5681923 A JP S5681923A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- thin film
- constitution
- manufacture
- per unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15893379A JPS5681923A (en) | 1979-12-06 | 1979-12-06 | Manufacture of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15893379A JPS5681923A (en) | 1979-12-06 | 1979-12-06 | Manufacture of thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5681923A true JPS5681923A (en) | 1981-07-04 |
JPS6239534B2 JPS6239534B2 (enrdf_load_stackoverflow) | 1987-08-24 |
Family
ID=15682505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15893379A Granted JPS5681923A (en) | 1979-12-06 | 1979-12-06 | Manufacture of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5681923A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5873167A (ja) * | 1981-10-27 | 1983-05-02 | Konishiroku Photo Ind Co Ltd | 薄膜太陽電池 |
JPS59167013A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | プラズマcvd装置 |
JPS59167012A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | プラズマcvd装置 |
JPS59219927A (ja) * | 1983-05-27 | 1984-12-11 | Fuji Electric Corp Res & Dev Ltd | プラズマcvd装置 |
JPS60157217A (ja) * | 1983-07-28 | 1985-08-17 | Fuji Electric Corp Res & Dev Ltd | プラズマcvd装置 |
JPH01125530U (enrdf_load_stackoverflow) * | 1988-05-12 | 1989-08-28 | ||
US6720576B1 (en) | 1992-09-11 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and photoelectric conversion device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4935152U (enrdf_load_stackoverflow) * | 1972-06-24 | 1974-03-28 | ||
JPS4942857U (enrdf_load_stackoverflow) * | 1972-07-19 | 1974-04-15 | ||
JPS531465A (en) * | 1976-06-25 | 1978-01-09 | Matsushita Electric Ind Co Ltd | Manufacturer for semiconductor mono crystal thin film and its manufacturing unit |
-
1979
- 1979-12-06 JP JP15893379A patent/JPS5681923A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4935152U (enrdf_load_stackoverflow) * | 1972-06-24 | 1974-03-28 | ||
JPS4942857U (enrdf_load_stackoverflow) * | 1972-07-19 | 1974-04-15 | ||
JPS531465A (en) * | 1976-06-25 | 1978-01-09 | Matsushita Electric Ind Co Ltd | Manufacturer for semiconductor mono crystal thin film and its manufacturing unit |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5873167A (ja) * | 1981-10-27 | 1983-05-02 | Konishiroku Photo Ind Co Ltd | 薄膜太陽電池 |
JPS59167013A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | プラズマcvd装置 |
JPS59167012A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | プラズマcvd装置 |
JPS59219927A (ja) * | 1983-05-27 | 1984-12-11 | Fuji Electric Corp Res & Dev Ltd | プラズマcvd装置 |
JPS60157217A (ja) * | 1983-07-28 | 1985-08-17 | Fuji Electric Corp Res & Dev Ltd | プラズマcvd装置 |
JPH01125530U (enrdf_load_stackoverflow) * | 1988-05-12 | 1989-08-28 | ||
US6720576B1 (en) | 1992-09-11 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and photoelectric conversion device |
US7095090B2 (en) | 1992-09-11 | 2006-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
Also Published As
Publication number | Publication date |
---|---|
JPS6239534B2 (enrdf_load_stackoverflow) | 1987-08-24 |
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