JPS6239534B2 - - Google Patents

Info

Publication number
JPS6239534B2
JPS6239534B2 JP54158933A JP15893379A JPS6239534B2 JP S6239534 B2 JPS6239534 B2 JP S6239534B2 JP 54158933 A JP54158933 A JP 54158933A JP 15893379 A JP15893379 A JP 15893379A JP S6239534 B2 JPS6239534 B2 JP S6239534B2
Authority
JP
Japan
Prior art keywords
thin film
substrate
gas
substrates
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54158933A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5681923A (en
Inventor
Hajime Ichanagi
Nobuhiko Fujita
Hiroshi Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15893379A priority Critical patent/JPS5681923A/ja
Publication of JPS5681923A publication Critical patent/JPS5681923A/ja
Publication of JPS6239534B2 publication Critical patent/JPS6239534B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP15893379A 1979-12-06 1979-12-06 Manufacture of thin film Granted JPS5681923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15893379A JPS5681923A (en) 1979-12-06 1979-12-06 Manufacture of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15893379A JPS5681923A (en) 1979-12-06 1979-12-06 Manufacture of thin film

Publications (2)

Publication Number Publication Date
JPS5681923A JPS5681923A (en) 1981-07-04
JPS6239534B2 true JPS6239534B2 (enrdf_load_stackoverflow) 1987-08-24

Family

ID=15682505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15893379A Granted JPS5681923A (en) 1979-12-06 1979-12-06 Manufacture of thin film

Country Status (1)

Country Link
JP (1) JPS5681923A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873167A (ja) * 1981-10-27 1983-05-02 Konishiroku Photo Ind Co Ltd 薄膜太陽電池
JPS59167012A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol プラズマｃｖｄ装置
JPS59167013A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol プラズマｃｖｄ装置
JPS59219927A (ja) * 1983-05-27 1984-12-11 Fuji Electric Corp Res & Dev Ltd プラズマｃｖｄ装置
JPS60157217A (ja) * 1983-07-28 1985-08-17 Fuji Electric Corp Res & Dev Ltd プラズマｃｖｄ装置
JPH0351971Y2 (enrdf_load_stackoverflow) * 1988-05-12 1991-11-08
US6720576B1 (en) 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935152U (enrdf_load_stackoverflow) * 1972-06-24 1974-03-28
JPS4942857U (enrdf_load_stackoverflow) * 1972-07-19 1974-04-15
JPS531465A (en) * 1976-06-25 1978-01-09 Matsushita Electric Ind Co Ltd Manufacturer for semiconductor mono crystal thin film and its manufacturing unit

Also Published As

Publication number Publication date
JPS5681923A (en) 1981-07-04

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