JPS6239534B2 - - Google Patents
Info
- Publication number
- JPS6239534B2 JPS6239534B2 JP54158933A JP15893379A JPS6239534B2 JP S6239534 B2 JPS6239534 B2 JP S6239534B2 JP 54158933 A JP54158933 A JP 54158933A JP 15893379 A JP15893379 A JP 15893379A JP S6239534 B2 JPS6239534 B2 JP S6239534B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- gas
- substrates
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 description 31
- 239000002994 raw material Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 TiC and TiN Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Description
【発明の詳細な説明】
本発明は原料ガスを分解することにより薄膜を
得るいわゆるCVD（Chemical Vapor
Deposition）法による薄膜製造法に関する。Detailed Description of the Invention The present invention is a so-called CVD (Chemical Vapor
Regarding the thin film manufacturing method using the Deposition method.
CVD法には次の３つの方法がある。１つは常
圧下で高温に保たれた反応容器内で原料ガスを熱
分解することにより薄膜を得るいわゆる常圧
CVD法であり、他の１つは気体の平均自由工程
を高め均一な膜厚を得るために減圧下で高温に保
たれた反応容器内で原料ガスを熱分解することに
より薄膜を得るいわゆる減圧CVD法であり、１
つは低温で膜を形成するために原料ガスをグロー
放電分解することにより薄膜を得るいわゆるプラ
ズマCVD法である。 There are three methods of CVD method: One is the so-called normal pressure method in which a thin film is obtained by thermally decomposing raw material gas in a reaction vessel kept at high temperature under normal pressure.
The other method is the so-called reduced pressure method, in which a thin film is obtained by thermally decomposing the raw material gas in a reaction vessel kept at high temperature under reduced pressure in order to increase the mean free path of the gas and obtain a uniform film thickness. CVD method, 1
One is the so-called plasma CVD method, which obtains thin films by glow discharge decomposition of raw material gases to form films at low temperatures.
従来、上記のCVD法は半導体集積回路製作に
おいてシリコン（Si）、金属、窒化物、酸化物な
どのエピタキシヤル成長、あるいはSiO2、Si3N4
などの絶縁保護膜の作製に、また各種工具製作に
おいて、TiC、TiNに代表される炭化物、窒化物
のコーテイングに応用されてきた。またプラズマ
CVD法はシラン（SiH4）ガスをグロー放電分解し
て得られるアモルフアスシリコン膜の形成などに
用いられている。アモルフアスシリコン膜は、置
換型不純物のドーピングにより、価電子制御が可
能であることが実験的に確められ、以来プラズマ
CVD法は、代替エネルギー源開発の要請に応え
る低コストの太陽電池や種々の電子デバイス製造
方法として着目されるようになつた。 Conventionally, the above CVD method has been used for epitaxial growth of silicon (Si), metals, nitrides, oxides, etc., or SiO 2 , Si 3 N 4 in the production of semiconductor integrated circuits.
It has been applied to coatings of carbides and nitrides, such as TiC and TiN, in the production of insulating protective films such as TiC and TiN, and in the production of various tools. Also plasma
The CVD method is used to form amorphous silicon films obtained by glow discharge decomposition of silane (SiH 4 ) gas. It has been experimentally confirmed that valence electrons can be controlled in amorphous silicon films by doping with substitutional impurities, and since then plasma
The CVD method has attracted attention as a method for manufacturing low-cost solar cells and various electronic devices that meet the demands for the development of alternative energy sources.
第１図は従来のCVD装置の概要を示す断面図
であり、１は反応容器、２は原料ガスを供給する
ガス供給口、３は原料ガス、４は排気ガス口、５
は排気ガス、６は基板、７は基板支持台である。 FIG. 1 is a cross-sectional view showing an outline of a conventional CVD apparatus, in which 1 is a reaction vessel, 2 is a gas supply port for supplying raw material gas, 3 is raw material gas, 4 is an exhaust gas port, and 5 is a gas supply port for supplying raw material gas.
6 is an exhaust gas, 6 is a substrate, and 7 is a substrate support stand.
しかしかかる構造のCVD装置は次のような次
点を有していた。基板６は、薄膜を形成するため
に離散して設置されそのために反応容器１の単位
容積あたりの生産性が低い。 However, the CVD apparatus with this structure had the following disadvantages. The substrates 6 are installed discretely to form a thin film, and therefore the productivity per unit volume of the reaction vessel 1 is low.
また、原料ガス３のまわり込みが良いため薄膜
は基板６の両面に形成される。薄膜の両面形成を
目的とする場合は構わないが、薄膜形成後片面の
みを使用する場合は裏面に堆積した薄膜は無駄と
なり、原料ガス３の収率は低下する。また、基板
６は外部ヒータ（図示せず）からの加熱であるた
めに熱効率が悪く、さらに反応容器１の内壁やヒ
ータ部に相当量の原料ガス分解生成物が堆積する
ために、原料ガス３の収率は低下する。また片面
のみに形成したい場合は裏面には薄膜形成を妨げ
るべくマスクが必要である。さらに上記のごとき
欠点は特にアモルフアスシリコン膜太陽電池等大
面積を必要とする薄膜を作製する場合問題とな
る。 Further, since the raw material gas 3 can circulate well, the thin film is formed on both sides of the substrate 6. It does not matter if the purpose is to form a thin film on both sides, but if only one side is used after forming the thin film, the thin film deposited on the back side will be wasted and the yield of the raw material gas 3 will decrease. Further, since the substrate 6 is heated by an external heater (not shown), thermal efficiency is poor, and furthermore, a considerable amount of raw material gas decomposition products accumulates on the inner wall of the reaction vessel 1 and the heater portion, so that the raw material gas 3 yield decreases. Furthermore, if it is desired to form on only one side, a mask is required on the back side to prevent thin film formation. Furthermore, the above-mentioned drawbacks become a problem especially when producing a thin film that requires a large area, such as an amorphous silicon film solar cell.
そこで発明者は上記欠点を解消すべく種々検討
を行なつた結果、２枚の基板の間にヒータを設置
し薄膜を製造するならば上記欠点が解消されると
考えた。 Therefore, the inventor conducted various studies to solve the above-mentioned drawbacks, and as a result, he thought that the above-mentioned drawbacks could be solved by installing a heater between two substrates and manufacturing a thin film.
従つて本発明の一つの目的は、反応容器単位容
積あたりの生産性の高いCVD法による薄膜製造
法を提供することにある。 Accordingly, one object of the present invention is to provide a thin film manufacturing method using the CVD method that has high productivity per unit volume of a reaction vessel.
本発明の他の目的は、原料ガスの収率の高い
CVD法による薄膜製造法を提供することにあ
る。 Another object of the present invention is to obtain a high yield of raw material gas.
The purpose of the present invention is to provide a thin film manufacturing method using the CVD method.
本発明の一つの目的は、ヒータの熱効率の高い
CVD法による薄膜製造法を提供することにあ
る。 One object of the present invention is to improve the thermal efficiency of the heater.
The purpose of the present invention is to provide a thin film manufacturing method using the CVD method.
本発明の他の目的は、基板の片面への薄膜形成
に際し裏面マスクの不要なCVD法による薄膜製
造法を提供することにある。本発明の一つの目的
は、大面積基板を用いたCVD法による薄膜製造
法を提供することにある。 Another object of the present invention is to provide a thin film manufacturing method using a CVD method that does not require a back mask when forming a thin film on one side of a substrate. One object of the present invention is to provide a thin film manufacturing method using a CVD method using a large-area substrate.
本発明は、ヒーターを介して二枚重ねにされた
長手方向に移動可能にされた二枚重ねの帯状の基
板と、ガス供給・排出方向を前記基板短手方向に
略一致させて、前記基板両側の前記基板長手方向
に交互に設けられたガス供給口およびガス排気口
とを有することを特徴とするCVD法による薄膜
製造法にある。 The present invention includes two stacked strip-shaped substrates that are stacked together and made movable in the longitudinal direction via a heater, and gas supply and discharge directions that are substantially aligned with the transverse direction of the substrates, and the substrates on both sides of the substrate. A thin film manufacturing method using a CVD method characterized by having gas supply ports and gas exhaust ports alternately provided in the longitudinal direction.
以下実施例について詳細に説明する。 Examples will be described in detail below.
第２図は本発明の薄膜製造に使用する装置の他
の実施例の概要を示す断面図であり、１１は反応
容器、１２は原料ガスを供給するガス供給口、１
３は排気ガス口、１４はグロー放電用の第１の電
極、１５は基板加熱用ヒータ、１６はグロー放電
用の第２電極、１７は帯状基板、１８は電極１４
と電極１６とに接続されている直流または高周波
電源、１９は帯状基板１７を送り出すロール、２
０は帯状基板１７を巻き取るロール、２１は補助
ロールである。 FIG. 2 is a sectional view showing an outline of another embodiment of the apparatus used for thin film production of the present invention, in which 11 is a reaction vessel, 12 is a gas supply port for supplying raw material gas, and 1
3 is an exhaust gas port, 14 is a first electrode for glow discharge, 15 is a heater for heating a substrate, 16 is a second electrode for glow discharge, 17 is a strip-shaped substrate, and 18 is an electrode 14
and a DC or high frequency power source connected to the electrode 16; 19 is a roll for feeding out the strip substrate 17;
0 is a roll for winding up the strip substrate 17, and 21 is an auxiliary roll.
第２図に示す動作は、原料ガスをガス供給口１
２から供給し、排気ガス口１３より排気し反応容
器１１内の原料ガスの分圧を10-2〜10Torrと
し、電源１８を起動させ、帯状基板１７をロール
１９から送り出すと同時にロール２０に所望の膜
を堆積した帯状基板１７を巻き取るものである。 The operation shown in Fig. 2 is to supply raw material gas to gas supply port 1.
2 and exhausted from the exhaust gas port 13 to set the partial pressure of the raw material gas in the reaction vessel 11 to 10 -2 to 10 Torr, start the power supply 18, and feed the strip substrate 17 from the roll 19 at the same time as the desired amount to the roll 20. The belt-shaped substrate 17 on which the film is deposited is wound up.
第２図に示す装置で原料ガスとしてシラン
（SiH4）ガスを使用し、基板は厚さ0.05mm、巾５
cm、長さ20ｍの帯状のステンレス鋼を使用し、基
板温度は250℃とし、高周波電源の出力は300Wの
条件で厚さ約１μｍのアモルフアスシリコン膜を
作製した結果を、第２図に示す装置で帯状基板を
一枚のみとし、他の条件は上記と同じとしてアモ
ルフアスシリコン膜を作製した結果を比較すると
本発明法の方がはるかに優れていた。 Silane (SiH 4 ) gas is used as the source gas in the apparatus shown in Figure 2, and the substrate is 0.05 mm thick and 5 mm wide.
Figure 2 shows the results of fabricating an amorphous silicon film with a thickness of approximately 1 μm using a stainless steel strip with a length of 20 m and a substrate temperature of 250°C and a high frequency power supply output of 300 W. Comparing the results of producing an amorphous silicon film using only one strip-shaped substrate in the apparatus and keeping the other conditions the same as above, the method of the present invention was far superior.
以上の説明はシラン（SiH4）を原料ガスとして
アモルフアスシリコン膜を得る場合について述べ
たが、他のガスを使用し他の膜を得る場合も同様
の効果が得られることは明らかである。 Although the above description has been made regarding the case where an amorphous silicon film is obtained using silane (SiH 4 ) as a source gas, it is clear that similar effects can be obtained when other films are obtained using other gases.
また、上記説明は、ステンレス鋼の基板の場合
について述べたが、他の如何なる導電性基板ある
いは絶縁性基板であつても同様の効果が得られる
ことは明らかである。 Furthermore, although the above description has been made regarding the case of a stainless steel substrate, it is clear that similar effects can be obtained with any other conductive or insulating substrate.
以上詳細に説明したごとく、本発明の製造法に
よれば、反応容器単位容積あたりの生産性の高い
CVD法による薄膜が得られる。また本発明の製
造法によれば、ヒータの熱効率の高いCVD法に
よる薄膜が得られる。また本発明の製造法によれ
ば、基板の片面への薄膜形成に際し裏面マスクの
不要なCVD法による薄膜が得られる。また本発
明の製造法によれば、大面積基板を用いたCVD
法による大面積の薄膜が得られる。 As explained in detail above, according to the production method of the present invention, high productivity per unit volume of the reaction vessel can be achieved.
A thin film can be obtained using the CVD method. Further, according to the manufacturing method of the present invention, a thin film can be obtained by the CVD method with high heater thermal efficiency. Further, according to the manufacturing method of the present invention, a thin film can be obtained by the CVD method that does not require a back mask when forming a thin film on one side of a substrate. Furthermore, according to the manufacturing method of the present invention, CVD using a large-area substrate
A large area thin film can be obtained by this method.
第１図は従来のCVD装置の概要を示す断面図
であり、第２図は本発明の薄膜製造に使用する装
置の一実施例の概要を示す断面図である。
FIG. 1 is a cross-sectional view showing an outline of a conventional CVD apparatus, and FIG. 2 is a cross-sectional view showing an outline of an embodiment of the apparatus used for manufacturing a thin film according to the present invention.
Claims (1)
に移動可能な帯状の基板と、ガスの供給・排出方
向を前記基板短手方向に略一致させて、前記基板
両側の前記基板長手方向に交互に設けられたガス
供給口およびガス排気口とを有することを特徴と
するCVD法による薄膜製造法。1 Two strip-shaped substrates stacked together via a heater and movable in the longitudinal direction, and gas supply and discharge directions substantially aligned with the lateral direction of the substrates, and provided alternately in the longitudinal direction of the substrates on both sides of the substrates. 1. A thin film manufacturing method using a CVD method, characterized by having a gas supply port and a gas exhaust port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15893379A JPS5681923A (en) | 1979-12-06 | 1979-12-06 | Manufacture of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15893379A JPS5681923A (en) | 1979-12-06 | 1979-12-06 | Manufacture of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5681923A JPS5681923A (en) | 1981-07-04 |
| JPS6239534B2 true JPS6239534B2 (en) | 1987-08-24 |
Family
ID=15682505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15893379A Granted JPS5681923A (en) | 1979-12-06 | 1979-12-06 | Manufacture of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5681923A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873167A (en) * | 1981-10-27 | 1983-05-02 | Konishiroku Photo Ind Co Ltd | Thin film solar cell |
| JPS59167012A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Plasma cvd equipment |
| JPS59167013A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Plasma cvd equipment |
| JPS59219927A (en) * | 1983-05-27 | 1984-12-11 | Fuji Electric Corp Res & Dev Ltd | Plasma cvd device |
| JPS60157217A (en) * | 1983-07-28 | 1985-08-17 | Fuji Electric Corp Res & Dev Ltd | Plasma cvd apparatus |
| JPH0351971Y2 (en) * | 1988-05-12 | 1991-11-08 | ||
| US6720576B1 (en) | 1992-09-11 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and photoelectric conversion device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4935152U (en) * | 1972-06-24 | 1974-03-28 | ||
| JPS531465A (en) * | 1976-06-25 | 1978-01-09 | Matsushita Electric Ind Co Ltd | Manufacturer for semiconductor mono crystal thin film and its manufacturing unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942857U (en) * | 1972-07-19 | 1974-04-15 |
-
1979
- 1979-12-06 JP JP15893379A patent/JPS5681923A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4935152U (en) * | 1972-06-24 | 1974-03-28 | ||
| JPS531465A (en) * | 1976-06-25 | 1978-01-09 | Matsushita Electric Ind Co Ltd | Manufacturer for semiconductor mono crystal thin film and its manufacturing unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5681923A (en) | 1981-07-04 |
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