JP4084635B2 - Cat-PECVD apparatus and film processing system using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to PECVD (Plasma Enhanced Chemical Vapor Deposition), which is a CVD (Chemical Vapor Deposition) method using plasma as a means for decomposing and activating a film forming gas, and decomposition and heating of a film forming gas.・ New CVD that combines Cat-CVD (Catalytic Chemical Vapor Deposition: catalytic CVD) method (same principle as HW-CVD (hot wire CVD) method), which is a CVD method using a thermal catalyst as the activation means The present invention relates to a Cat-PECVD apparatus and a film processing system using the Cat-PECVD apparatus.
[0002]
[Prior art and its problems]
In thin film formation using a vacuum apparatus, it is usually difficult to limit thin film formation to only a desired substrate, and inevitably film, powder, etc. adhere to the film formation chamber other than the desired substrate. To do. Since these deposits act as a contamination source in various meanings such as an impurity contamination source and a foreign matter contamination source for film formation on a desired substrate, in the thin film deposition apparatus, Periodic removal (cleaning) is essential.
[0003]
The usual cleaning method is to open the apparatus to the atmosphere and clean the inner wall of the film formation and the internal components using mechanical means such as wiping or scraping, or chemical means such as an etching solution. However, this method requires a very long time for evacuation after cleaning in order to release the apparatus to the atmosphere, and also requires a lot of time and effort for cleaning itself, so that the productivity of the apparatus is remarkably reduced. In particular, in a product with a very large production amount, such as a thin-film Si-based solar cell, and therefore in a thin-film deposition apparatus in which a large amount of thin-film deposition is performed in a short time, the method is a fatal decrease in productivity, that is, a significant reduction. Will result in a significant cost increase.
[0004]
On the other hand, there is known a method (in-situ cleaning) in which cleaning of the inside of the apparatus is performed in a simple and short time while maintaining a vacuum state by flowing a cleaning gas without opening the apparatus to the atmosphere. A typical method is to decompose and activate a gas containing fluorine (F) or chlorine (Cl) in a cleaning gas by plasma, and react the activated gas with the deposits to vaporize and exhaust the gas. That's it. However, normally, plasma cannot be generated in the entire area of the apparatus, and the plasma generation region is limited to a part of the apparatus, so that there is a problem that the removal of the deposits is insufficient.
[0005]
In contrast, ClF_ThreeAlso known is an in-situ cleaning method that uses a gas with high reactivity such as raising the temperature in the film forming chamber to a predetermined temperature and reacting and vaporizing the reactive gas and deposits to remove the exhaust gas. It has been. This compensates for the drawbacks of the method using plasma as long as the temperature in the entire film forming chamber can be raised to a predetermined temperature, but usually the temperature in the film forming chamber needs to be about 200 ° C. For this reason, there are problems such as a considerable thermal load on the apparatus, a temperature rising process until cleaning, and a temperature lowering process after cleaning which requires a considerable time (see Patent Document 1).
[0006]
In contrast, an in-situ cleaning method using a thermal catalyst has been proposed (see Patent Document 1 and Patent Document 2). In this method, a cleaning gas is heated and activated by a thermal catalyst body (heating element) made of metal, and the activated gas and the deposits are reacted and vaporized for exhaust removal. FIG. 11 shows a schematic diagram of an apparatus for realizing the present method. 600 is a shower head for jetting cleaning gas, 601 is a cleaning gas introduction port, 602 is a cleaning gas jet port, 603 is an active gas space in which the cleaning gas is activated, 604 is heating and activation of the cleaning gas 605 is a heating power source for heating the thermal catalyst body, and 608 is a vacuum pump for exhausting the gas. Although not a constituent requirement of the present method, FIG. 11 also shows a base (606) and a base heater (607) that are constituent requirements when the apparatus is used as a film forming apparatus.
[0007]
By the way, the present inventors have been studying a new type of CVD method in which PECVD method and Cat-CVD method have been fused for some time, and a method named Cat-PECVD method has already been named in Patent Documents 3-6. Has been disclosed. FIG. 5 is a schematic view of an apparatus for realizing a parallel plate electrode type Cat-PECVD method, and FIGS. 6 to 10 are schematic views of an apparatus for realizing an antenna electrode type Cat-PECVD method.
[0008]
Here, in FIG. 5, 700 is a shower head, 701 is a raw material gas inlet containing a gas containing Si and / or C in the molecular formula, and 702 is a non-Si non-Si composed of a gas not containing Si and C in the molecular formula. C gas introduction port, 703 is a raw material gas introduction path, 704 is a non-Si non-C gas introduction path, 705 is a thermal catalyst, 706 is a heating power source, 707 is a plasma space, 708 is a plasma generation electrode, 709 Is a high-frequency power source, 710 is a raw material gas outlet, 711 is a non-Si / non-C gas outlet, 712 is a substrate for film formation, 713 is a heater for heating the substrate, 714 is a vacuum pump for exhausting gas, and 715 is It is a radiation blocking member.
[0009]
FIG. 6 is an overall view showing an example of an apparatus for realizing the antenna electrode type Cat-PECVD method. When the film-forming surface of the flat substrate is oriented in a direction perpendicular to the paper surface, a thermal catalyst is incorporated. It is sectional drawing in the antenna electrode position made. FIG. 7 shows an example in which the tubular antenna electrodes are arranged in an array, and is a cross-sectional view when the film-forming surface of the substrate faces in a direction parallel to the paper surface (in order to show the presence of the substrate, an array shape). Only a part of the antenna electrode unit is shown, and details of the end structure of the antenna electrode are omitted: see FIG. 6 and FIG. 8 for details). FIG. 8 is a cross-sectional view showing a detailed structure of an antenna electrode incorporating a thermal catalyst. FIG. 9 is a perspective view showing a three-dimensional structure of an antenna electrode incorporating a thermal catalyst. FIG. 10 is a cross-sectional view of an antenna electrode having a double tube structure and incorporating a thermal catalyst.
[0010]
6 to 10, 101 is a non-Si non-C gas introduction port made of a gas not containing Si and C in the molecular formula, and 102 is a raw material gas containing a gas containing Si and / or C in the molecular formula. , 103 is a thermal catalyst, 104 is a power source for heating the thermal catalyst 103, 105 is an active gas space, 106a is an antenna electrode with a built-in thermal catalyst, 106b is an antenna with no built-in thermal catalyst, 107a And 107b are high-frequency power supplies, 108a and 108c are phase converters, 108b and 108d are power distributors, 109 is a substrate for film formation, 110 is a heater for heating the substrate, and 111a is provided on the antenna electrode 106a with a built-in thermal catalyst. Gas outlet (the antenna electrode with no built-in thermal catalyst is also provided with a gas outlet, but the description is omitted), 112 is an insulation for electrical insulation Wood, 113 chambers constituting the film space (film deposition chamber), 114a and 114b, the hollow portion provided in the antenna electrode, 201 is a gas discharge port. Although the gas discharge port is connected to a vacuum pump, the illustration is omitted.
[0011]
Hereinafter, the Cat-PECVD method will be described based on the parallel plate electrode-type Cat-PECVD apparatus shown in FIG. 5, but the same principle will be described for the antenna electrode-type Cat− shown in FIGS. 6 to 10. Needless to say, this also applies to the PECVD apparatus.
[0012]
The Cat-PECVD method uses, for example, SiH as a raw material gas._FourH as non-Si non-C based gas₂Are separated and introduced into the film forming chamber through different gas introduction paths, and H₂Is heated and activated by the thermal catalyst 705 installed in the gas introduction path, and SiH_FourIs to form a Si-based film by mixing in the plasma space 707, and a high-quality crystalline Si film with high crystallinity can be easily obtained even under high-speed film forming conditions. In addition, a high-quality hydrogenated amorphous silicon film having a low hydrogen concentration with little degree of photodegradation can be obtained even under high-speed film formation conditions. This is because this method uses a thermal catalyst to produce H₂The amount of heating / activation of SiH_FourCan be freely controlled independently of the amount of plasma decomposition and activation, and SiH_FourIs activated only by plasma, so that undesirable radical generation by the thermal catalyst 705 can be avoided, and a radiation blocking member 715 can be installed, so that radiation directly reaching the substrate 712 from the thermal catalyst 705 can be generated. The film formation surface temperature can be blocked and an undesirable increase in the surface temperature of the film can be avoided, and further, the gas heating effect by the thermal catalyst 705 can suppress the higher order silane formation reaction in the gas phase (SiH₂Since the higher order silane formation reaction due to the molecule insertion reaction is an exothermic reaction, the increase in the gas temperature due to gas heating has the effect of braking the higher order silane formation reaction).
[0013]
The advantage of the antenna electrode type over the parallel plate type electrode is that a large-area uniform film formation can be easily realized even using VHF plasma.
[0014]
Now, the in-situ cleaning method using the thermal catalyst disclosed in Patent Document 1 and Patent Document 2, however, this method is not suitable for application to the Cat-PECVD method developed by the present inventors. It turns out that there is a problem.
[0015]
That is, in the Cat-PECVD method, a thermal catalyst is disposed in the introduction path of the non-Si non-C gas among the gases to be separated and introduced, and ideally, Si or Deposits such as C-containing films and powders should not be generated. However, in practice, for example, as described above, SiH_FourWhen Si is used as the source gas, the SiH introduced into the film forming space_FourAnd the SiH_FourThe gas molecules containing Si generated by various reactions in the plasma space using the gas as a base gas are slightly diffused and entered into the non-Si non-C gas introduction path and heated by the thermal catalyst disposed in the gas introduction path. When activated, the deposit may be generated to some extent in the gas introduction pipe. However, in the in-situ cleaning method using the thermal catalyst, the thermal catalyst is Since the film is disposed only in the film forming space downstream of the shower head (and therefore the gas introduction path), the deposits generated in the non-Si non-C gas introduction path cannot be easily removed.
[0016]
Furthermore, this clearly shows that the film forming chamber is not easily allowed to be used for continuously forming films of different conductivity types. That is, the conductive type determining element (doping element) of the deposit already generated on the inner surface of the film forming chamber and the inner surface of the gas introduction path based on the film forming history until the target film is formed is the target. This is because it determines the conductivity type of the film and the degree of doping, that is, the film quality.
[0017]
In contrast, the present inventors disclosed a method for removing deposits generated in the gas introduction path in Patent Document 7. That is, H as the cleaning gas₂And the gas is heated and activated with a thermal catalyst to remove deposits in the gas introduction path. At this time, for the cleaning of the inner wall of the film forming space on the side of the film forming space, the gas activated by the thermal catalyst is additionally activated by plasma in the film forming space. The cleaning was more effective than the case.
[0018]
However, in Patent Document 7, the means for activating the gas existing on the film forming space side is limited to plasma. For this reason, the problem in the case of using the above-described plasma (because the plasma generation position is limited to a predetermined position, which makes it difficult to clean the entire film forming space) still remains unsolvable.
[0019]
The present invention has been made based on such a background, and an object thereof is to provide a Cat-PECVD apparatus that realizes an excellent and effective gas cleaning method and a film processing system that realizes the Cat-PECVD apparatus. In particular, in the formation of Si-based thin films in photoelectric conversion devices typified by thin-film Si-based solar cells, etc., device maintenance work is simplified and time is reduced, and different conductivity type films are continuously formed in the same film-forming chamber. The purpose is to greatly reduce the cost of the apparatus by making it possible.
[0020]
[Patent Document 1]
JP 2001-49436 A
[Patent Document 2]
JP 2001-49437 A
[Patent Document 3]
Japanese Patent Application No. 2000-130858
[Patent Document 4]
Japanese Patent Application No. 2001-293031
[Patent Document 5]
Japanese Patent Application No. 2002-67445
[Patent Document 6]
Japanese Patent Application No. 2002-155537
[Patent Document 7]
Japanese Patent Application No. 2002-007147
[0021]
[Means for Solving the Problems]
  The Cat-PECVD apparatus according to the present invention includes a raw material gas containing a gas containing Si and / or C in the molecular formula, and Si and C in the molecular formula heated by the first thermal catalyst disposed in the gas introduction path. The film-forming space is formed from a plurality of gas outlets provided in a shower head that also serves as a plasma generation electrode installed in the film-forming space in a state where the non-Si non-C gas composed of a gas that does not contain gas is separated from each other. The gas mixed into the film forming space is decomposed and activated by the plasma generated by the shower head connected to a high-frequency power source, and faces the shower head in the film forming space. A Cat-PECVD apparatus configured to deposit a film on a substrate disposed in a second position, wherein the second is different from the thermal catalyst disposed in the non-Si non-C gas introduction path. A catalyst body is disposed in the film forming space, and for cleaning containing at least one of hydrogen gas, gas containing fluorine (F) in molecular formula, or gas containing chlorine (Cl) in molecular formula A gas is introduced into the film forming space through at least the non-Si non-C gas introduction path, heated and activated by the first thermal catalyst body and the second thermal catalyst body, and heated and activated. A cleaning mechanism is provided for etching and removing deposits deposited in the film forming chamber constituting the film forming space by gas.The second thermal catalyst is retracted at a position different from that at the time of cleaning so as not to become an object to be adhered to when the film is formed.It is characterized by that.
[0022]
  In addition, a non-chemical gas consisting of a raw material gas containing a gas containing Si and / or C in the molecular formula and a gas not containing Si and C in the molecular formula heated by the first thermal catalyst disposed in the gas introduction path. The Si non-C gas is separated from each other through a plurality of gas outlets provided in the antenna electrode through a hollow portion of the antenna electrode having a hollow structure installed in the film forming space. The gas injected into the film space and mixed into the film forming space is decomposed and activated by the plasma generated by the antenna electrode connected to a high-frequency power source, and is then applied to the antenna electrode in the film forming space. A Cat-PECVD apparatus configured to deposit a film on a substrate disposed oppositely, wherein the second heat is different from the thermal catalyst disposed in the non-Si non-C gas introduction path. The catalyst body is in front At least a cleaning gas containing at least one of hydrogen gas, gas containing fluorine (F) in the molecular formula, or gas containing chlorine (Cl) in the molecular formula is disposed in the film forming space. It is introduced into the film forming space through the non-Si non-C based gas introduction path, heated and activated by the first thermal catalyst body and the second thermal catalyst body, and the production is performed by the heated and activated gas. Equipped with a cleaning mechanism that removes deposits deposited in the deposition chamber that forms the membrane space.The second thermal catalyst is retracted at a position different from that at the time of cleaning so as not to become an object to be adhered to when the film is formed.It is characterized by that.
[0024]
The film processing system of the present invention is a film processing system comprising a plurality of vacuum chambers including at least one film forming chamber comprising the above Cat-PECVD apparatus, wherein the film forming chamber comprises an Si-based film or C It has a structure in which at least one of a doping gas that can make the system film p-type or a doping gas that can make it n-type can be introduced.
[0025]
Further, in the film processing system, an Si-based film or a C-based film in which at least two kinds of films having different conductivity types are stacked among a p-type film, a substantially i-type film, and an n-type film is manufactured. In forming the film, at least immediately before forming the i-type film, the film forming chamber is cleaned with a cleaning gas.
[0026]
Further, this membrane processing system is characterized in that a waiting room is provided adjacent to the substrate, which is isolated by a vacuum valve and can store a substrate.
[0027]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below in detail with reference to the drawings schematically shown.
[0028]
FIG. 1 is an overall view showing an example of an apparatus for realizing a parallel plate electrode type Cat-PECVD method. Here, 705a is a first thermal catalyst disposed in the non-Si non-C gas introduction path, 705b is a second thermal catalyst disposed in the film forming space, and 706a is a first thermal catalyst. A heating power source 706b is a heating power source for the second thermal catalyst, and the other numbers are the same as those in FIG.
[0029]
FIG. 2 is an overall view showing an example of an apparatus for realizing the antenna electrode type Cat-PECVD method. When the film-forming surface of the flat substrate is oriented in a direction perpendicular to the paper surface, the thermal catalyst is It is sectional drawing in the position of the built-in antenna electrode. FIG. 3 is a cross-sectional view of the arrayed antenna electrode as viewed from the central axis direction.
[0030]
In these drawings, 103a is a first thermal catalyst disposed in the non-Si non-C gas introduction path, 103b is a second thermal catalyst disposed in the film forming space, and 104a is the first heat catalyst. A heating power source for the catalyst body, 104b is a heating power source for the second thermal catalyst body, 109a and 109b are bases, 111b is a gas outlet provided in the antenna electrode 106b without the built-in thermal catalyst body, and the others Is the same as that of FIG.
[0031]
In the following description, the parallel plate Cat-PECVD apparatus shown in FIG. 1 will be mainly described as an example, but the same description applies to the antenna electrode Cat-PECVD apparatus shown in FIGS. Since it can be applied, the description will be omitted except for parts that require individual explanation.
[0032]
Now, using the Cat-PECVD apparatus shown in FIG._FourAnd H as non-Si non-C gas₂An example in which a Si-based film is formed on a substrate using a film will be described below.
[0033]
When a Si-based film is formed on a substrate, inevitably, a Si-based film or powder adheres to a film forming chamber other than the substrate. Further, in the Cat-PECVD method, the first thermal catalyst 705a is heated in the film forming mode. Therefore, depending on the film forming conditions, as described above in the section of the related art and the problem, non-Si non-Si The deposit may also be generated in the vicinity of the thermal catalyst in the C-based gas introduction path.
[0034]
These deposits greatly affect the quality of the Si-based film formed on the substrate. That is, film quality is obtained by taking in the Si-based film such as dust generated by peeling of the film that is a deposit, desorption of powder, and higher silane gas generated by the reaction of the deposit with the active gas. Will decline.
[0035]
  Therefore, after these deposits have passed through the film forming mode at least once, they are put into the gas cleaning mode.MigrationTo reduce the extent to which the presence of deposits adversely affects the quality of the desired film deposited on the substrate. A cleaning gas for gas cleaning is introduced at least from the non-Si non-C gas introduction path, and is heated and activated by the first thermal catalyst body 705a and the second thermal catalyst body 705b. The activated cleaning gas reacts with the deposit on the non-Si non-C gas introduction path and the deposit in the film forming space, the deposit is vaporized and exhausted, and cleaning proceeds.
[0036]
Here, as the cleaning gas, hydrogen (H₂), A gas containing fluorine (F) in the molecular formula, or a gas containing at least one of chlorine (Cl) in the molecular formula can be used. The gas containing fluorine in the molecular formula and the gas containing chlorine in the molecular formula include SF₆, NF_Three, CF_Four, C₂F₆, C_ThreeF₈, CCl_Four, C₂ClF_Five, ClF_Three, CClF_Three, Etc. can be used.
[0037]
Here, the thermal catalyst bodies 705a and 705b are made of a metal material at least on the surface in order to function as a thermal catalyst body by passing an electric current therethrough and heating and raising the temperature by Joule heat generation. More preferably, it is made of a metal material containing as a main component at least one of Ta, W, Re, Os, Ir, Nb, Mo, Ru, and Pt, which are refractory metal materials. In addition, as the shape of the thermal catalyst, a metal material as described above is usually used in the form of a wire. However, the shape is not particularly limited to a wire shape, and a plate-like or mesh-like shape is also used. Can do. In addition, when the metal material which is a thermal catalyst body material includes an undesirable impurity for film formation, before using the thermal catalyst bodies 705a and 705b for the film formation, the heating temperature at the time of film formation or higher is previously set. Preheating at temperature for several minutes or more is effective in reducing impurities.
[0038]
As the heating power supplies 706a and 706b for the thermal catalyst bodies 705a and 705b, it is usually easy to use a DC power supply, but there is no problem even if a low-frequency AC power supply that does not generate plasma is used.
[0039]
The temperature of the thermal catalyst varies depending on the type of cleaning gas used. For example, H₂In the case of the cleaning gas that does not etch the thermal catalyst as described above, the temperature is set to 1000 ° C. or higher. H depending on pressure₂This is because the decomposition reaction of H 2 into atomic hydrogen H becomes remarkable from about 1000 ° C. or more, and the cleaning effect increases according to the degree of decomposition. On the other hand, when a gas containing F or a gas containing Cl is used as the cleaning gas, if the temperature of the thermal catalyst is not sufficiently high, the thermal catalyst itself is consumed by etching due to the reaction with the cleaning gas. May end up. In this case, the temperature of the thermal catalyst is increased to a temperature at which the cleaning gas or a decomposition component thereof is thermally desorbed from the surface of the thermal catalyst before the reaction between the thermal catalyst material and the cleaning gas proceeds. Do it. It should be noted that the temperature of the thermal catalyst body must be set to a level that does not cause evaporation of the thermal catalyst body material. The maximum use temperature varies depending on the material of the thermal catalyst, but a temperature lower by about 500 to 1000 ° C. than the melting point temperature of the material can be used as an approximate guide.
[0040]
  Here, the second thermal catalyst body 705b disposed in the film forming space is used for gas cleaning while the apparatus is being used in the film forming mode (the second thermal catalyst body is not heated at this time). So that it can be placed at a position different from the position in the film-forming space during mode.deep. This is because in the film forming mode, the second thermal catalyst is an object to be adhered to the deposits described so far and causes the problems described so far. Specifically, in FIG. 1, the second thermal catalyst 705 b is moved downward in advance and embedded in a groove (not shown) provided in the heater component before the apparatus enters the film forming mode. Let's save. In this way, the film formation can be realized under the same conditions as when the second thermal catalyst 705b does not exist, and the above problem can be avoided. Note that the method for retracting the second thermal catalyst is not limited to the above method, and it is needless to say that the second thermal catalyst may be retracted in the horizontal direction, for example.
[0041]
  2 and 3 show an example of a method for disposing the second thermal catalyst 103b in the antenna electrode type Cat-PECVD method. In this case as well, the gas cleaning shown in FIG. Arranged at a position different from the arrangement position in the modeTo do.For the same reason as aboveIs.
<Film treatment system and process capable of depositing different conductivity type semiconductor films in the same deposition chamber>
  FIG. 12 shows a p-i-n type cell (top cell) using an i-type hydrogenated amorphous silicon film as a photoactive layer, and a p-i using an i-type microcrystalline silicon film as a photoactive layer. An example of a conventional apparatus for manufacturing a tandem-type thin-film Si solar cell in which an n-type cell (bottom cell) is stacked is shown. In this example, the Cat-PECVD method is used to form an i-type hydrogenated amorphous silicon film and an i-type microcrystalline silicon film. Of course, other films (p-type film, n-type film) are used. The Cat-PECVD method may be used for forming the film.
[0042]
  Here, FIG. 4 shows an example of an apparatus configuration when the gas cleaning method of the present invention is applied. Here, an example is shown in which the p-i-n type top cell is realized by one film-forming chamber and the p-i-n type bottom cell is realized by one film-forming chamber. In order to form a p-type film and an n-type film in each film forming chamber, ₂ H ₆ P-type doping gas and PH represented by ₃ An n-type doping gas typified by can be introduced. Thus, as shown in FIG. 12, the p-type film, the i-type film, and the n-type film are conventionally formed in independent film forming chambers, but according to the gas cleaning method of the present invention. For example, since the deposits deposited in the film forming chamber can be removed by gas cleaning (that is, the previous film forming history can be erased), different types of conductive films can be continuously manufactured even in the same film forming chamber. A film can be formed.
[0043]
Further, the gas cleaning is performed immediately before the film formation when at least the i-type film is formed. This is because the quality of the i-type film determines the characteristics of the solar cell. On the other hand, in the case of forming a p-type film and an n-type film, it is not always necessary to perform gas cleaning immediately before the film formation. This is because the doping concentration of the p-type film and the n-type film for solar cells is usually not high enough to be influenced by the film forming history of the film forming chamber, and is often sufficiently high. However, it goes without saying that it is desirable to implement it if possible.
[0044]
The continuous formation of the different conductivity type films by the gas cleaning method is a conventionally known technique. However, when the film forming method using the Cat-PECVD method is used, the gas cleaning method (manufactured by the present invention) is used. It is obvious that a method of cleaning the gas not only in the film chamber but also in the non-Si non-C gas introduction path) is essential.
[0045]
FIG. 4 also shows a retracting chamber in which the substrate is temporarily retracted when the film forming chamber is gas-cleaned. As a result, the influence of gas cleaning on the substrate can be avoided.
[0046]
In the above description, the case where three types of films of p-type, i-type, and n-type are formed in one film-forming chamber has been described. Of course, two of these films, or one kind of film Needless to say, this method can also be applied to the film formation.
[0047]
【The invention's effect】
As described above, according to the Cat-PECVD apparatus of the present invention and the film processing system using the Cat-PECVD apparatus, it is possible to provide an excellent and effective gas cleaning method and an apparatus configuration for realizing the gas cleaning method. Significant time savings can be realized.
[0048]
Also, since different conductive type films can be continuously formed in the same film forming chamber, the apparatus cost can be greatly reduced.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view schematically illustrating an example of an apparatus for realizing a gas cleaning method according to the present invention.
FIG. 2 is a cross-sectional view schematically illustrating an example of an apparatus for realizing a gas cleaning method according to the present invention.
FIG. 3 is a diagram schematically illustrating an example of an apparatus configuration that realizes the gas cleaning method according to the present invention, and is a cross-sectional view of the antenna electrode as viewed from the central axis direction.
FIG. 4 is a diagram for explaining an example of a film processing system for realizing a Cat-PECVD method according to the present invention.
FIG. 5 is a diagram schematically illustrating an example of a conventional Cat-PECVD apparatus.
FIG. 6 is a diagram schematically illustrating an example of a conventional Cat-PECVD apparatus.
FIG. 7 is a diagram schematically illustrating an example of a configuration of a conventional Cat-PECVD apparatus.
FIG. 8 is a cross-sectional view schematically illustrating an example of a part of a conventional Cat-PECVD apparatus.
FIG. 9 is a perspective view schematically illustrating an example of a part of a conventional Cat-PECVD apparatus.
FIG. 10 is a cross-sectional view schematically illustrating an example of a part of a conventional Cat-PECVD apparatus.
FIG. 11 is a cross-sectional view schematically illustrating an example of an apparatus for realizing a conventional gas cleaning method.
FIG. 12 is a schematic diagram illustrating an example of a conventional film processing system.
[Explanation of symbols]
103a: a first thermal catalyst disposed in a non-Si non-C gas introduction path
101: Non-Si non-C-based gas inlet made of a gas not containing Si and C in the molecular formula
102: Inlet for raw material gas containing gas containing Si and / or C in molecular formula
103: Thermal catalyst body
103b: a second thermal catalyst disposed in the film forming space
104: Power source for heating the thermal catalyst 103
104a: Heating power source for the first thermal catalyst
104b: Heating power source for the second thermal catalyst
105: Active gas space
106a: antenna electrode with built-in thermal catalyst
106b: Antenna electrode without a built-in thermal catalyst
107a, 107b: high frequency power supply
108a, 108c: phase converters
108b, 108d: Power distributor
109: Substrate for film formation
109a, 109b: substrate
110: Heater for heating the substrate
111b: antenna electrode with no built-in thermal catalyst
111a: Gas outlet provided in the antenna electrode 106a with a built-in thermal catalyst
112: Insulating member for electrical insulation
113: Chamber forming the film forming space (film forming room)
114a, 114b: hollow portions provided inside the antenna electrode
201: Gas outlet
700: Shower head
701: Raw material gas inlet containing a gas containing Si and / or C in the molecular formula
702: Non-Si non-C gas inlet made of a gas not containing Si and C in the molecular formula
703: Raw material gas introduction route
704: Non-Si non-C gas introduction route
705: Thermal catalyst body
705a: first thermal catalyst disposed in the non-Si non-C gas introduction path
705b: a second thermal catalyst disposed in the film forming space
706: Heating power source
706a: Heating power source for the first thermal catalyst
706b: Heating power source for the second thermal catalyst body
707: Plasma space
708: Electrode for plasma generation
709: High frequency power supply
710: Raw material type gas outlet
711: Non-Si / Non-C gas outlet
712: Substrate for film formation
713: Substrate heating heater
714: Vacuum pump for gas exhaust
715: Radiation blocking member

Claims (6)

A non-Si non-material consisting of a raw material gas containing a gas containing Si and / or C in the molecular formula and a gas not containing Si and C in the molecular formula heated by the first thermal catalyst disposed in the gas introduction path. In a state where the C-based gases are separated from each other, the gas is ejected from a plurality of gas ejection ports provided in a shower head also serving as a plasma generation electrode installed in the film-forming space to the film-forming space. The jetted and mixed gas is decomposed and activated by the plasma generated by the shower head connected to a high-frequency power source, and a film is deposited on the substrate disposed facing the shower head in the film forming space. In the Cat-PECVD apparatus configured as described above, a second thermal catalyst body different from the thermal catalyst body disposed in the non-Si non-C gas introduction path is disposed in the film forming space. The A cleaning gas containing at least one of hydrogen gas, gas containing fluorine (F) in the molecular formula, or gas containing chlorine (Cl) in the molecular formula is introduced at least into the non-Si non-C-based gas. A film forming chamber introduced into the film forming space through a path, heated and activated by the first thermal catalyst body and the second thermal catalyst body, and constituting the film forming space by the heated and activated gas The second thermal catalyst body is retracted at a position different from that at the time of cleaning so as not to become an object to be adhered to at the time of film formation. Cat-PECVD apparatus characterized by this. A non-Si non-material consisting of a raw material gas containing a gas containing Si and / or C in the molecular formula and a gas not containing Si and C in the molecular formula heated by the first thermal catalyst disposed in the gas introduction path. The film-forming space is formed from a plurality of gas outlets provided in the antenna electrode through a hollow portion of the antenna electrode having a hollow structure installed in the film-forming space in a state where the C-based gas is separated from each other. The gas mixed into the film forming space is decomposed and activated by the plasma generated by the antenna electrode connected to a high frequency power source, and is opposed to the antenna electrode in the film forming space. A Cat-PECVD apparatus configured to deposit a film on a substrate disposed in a second manner, wherein the second thermal catalyst is different from the thermal catalyst disposed in the non-Si non-C gas introduction path. Is said film formation The cleaning gas containing at least one of hydrogen gas, gas containing fluorine (F) in the molecular formula, or gas containing chlorine (Cl) in the molecular formula is at least the non-layer. The film-forming space is introduced into the film-forming space through the Si non-C-based gas introduction path, heated and activated by the first thermal catalyst body and the second thermal catalyst body, and the film-forming space by the heated and activated gas. The second thermal catalyst body is different from that at the time of cleaning so that the second thermal catalyst body does not become an object to be adhered to at the time of film formation. A Cat-PECVD apparatus characterized by being retracted to a position . A substrate heater for mounting the substrate is provided, and the second thermal catalyst is retracted so as to be embedded in a groove provided in the substrate heater during film formation. Item 3. A Cat-PECVD apparatus according to Item 1 or 2. A film processing system comprising a plurality of vacuum chambers including at least one film forming chamber comprising the Cat-PECVD apparatus according to any one of claims 1 to 3, wherein the film forming chamber is a Si-based film or a C-based film. A film processing system having a structure capable of introducing at least one of a doping gas capable of making a film p-type or a doping gas capable of making an n-type film.   5. The film processing system according to claim 4, wherein a Si-based film or a C-based film in which at least two kinds of films having different conductivity types are stacked among a p-type film, a substantially i-type film, and an n-type film. In forming a film, at least immediately before forming an i-type film, the film forming chamber is cleaned with a cleaning gas. 6. The film processing system according to claim 4 or 5, wherein a film-making chamber comprising the Cat-PECVD apparatus according to any one of claims 1 to 3 has a retreat chamber that is isolated by a vacuum valve and can store a substrate. A membrane processing system provided adjacent to each other.

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