JPH0547970B2 - - Google Patents

Info

Publication number
JPH0547970B2
JPH0547970B2 JP58093769A JP9376983A JPH0547970B2 JP H0547970 B2 JPH0547970 B2 JP H0547970B2 JP 58093769 A JP58093769 A JP 58093769A JP 9376983 A JP9376983 A JP 9376983A JP H0547970 B2 JPH0547970 B2 JP H0547970B2
Authority
JP
Japan
Prior art keywords
electrode
roll
susceptor
reaction chamber
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58093769A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59219927A (ja
Inventor
Shinji Nishiura
Yoshuki Uchida
Kazumi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP58093769A priority Critical patent/JPS59219927A/ja
Publication of JPS59219927A publication Critical patent/JPS59219927A/ja
Publication of JPH0547970B2 publication Critical patent/JPH0547970B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP58093769A 1983-05-27 1983-05-27 プラズマｃｖｄ装置 Granted JPS59219927A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58093769A JPS59219927A (ja) 1983-05-27 1983-05-27 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58093769A JPS59219927A (ja) 1983-05-27 1983-05-27 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS59219927A JPS59219927A (ja) 1984-12-11
JPH0547970B2 true JPH0547970B2 (enrdf_load_stackoverflow) 1993-07-20

Family

ID=14091630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58093769A Granted JPS59219927A (ja) 1983-05-27 1983-05-27 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS59219927A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63246814A (ja) * 1987-04-02 1988-10-13 Matsushita Electric Ind Co Ltd 薄膜形成装置
WO2004087991A1 (ja) * 2003-03-31 2004-10-14 Konica Minolta Holdings, Inc. 薄膜形成装置及び薄膜形成方法
JP4817313B2 (ja) * 2006-09-01 2011-11-16 株式会社アルバック 巻取式プラズマｃｖｄ装置
WO2012004175A1 (en) * 2010-07-09 2012-01-12 Vito Nv Method and device for atmospheric pressure plasma treatment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934421B2 (ja) * 1979-11-29 1984-08-22 住友電気工業株式会社 薄膜製造法
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film

Also Published As

Publication number Publication date
JPS59219927A (ja) 1984-12-11

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