JPS59219927A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS59219927A
JPS59219927A JP58093769A JP9376983A JPS59219927A JP S59219927 A JPS59219927 A JP S59219927A JP 58093769 A JP58093769 A JP 58093769A JP 9376983 A JP9376983 A JP 9376983A JP S59219927 A JPS59219927 A JP S59219927A
Authority
JP
Japan
Prior art keywords
electrode
roll
reaction chamber
susceptor
wound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58093769A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0547970B2 (enrdf_load_stackoverflow
Inventor
Shinji Nishiura
西浦　真治
Yoshiyuki Uchida
内田　喜之
Kazumi Maruyama
和美 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP58093769A priority Critical patent/JPS59219927A/ja
Publication of JPS59219927A publication Critical patent/JPS59219927A/ja
Publication of JPH0547970B2 publication Critical patent/JPH0547970B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP58093769A 1983-05-27 1983-05-27 プラズマｃｖｄ装置 Granted JPS59219927A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58093769A JPS59219927A (ja) 1983-05-27 1983-05-27 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58093769A JPS59219927A (ja) 1983-05-27 1983-05-27 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS59219927A true JPS59219927A (ja) 1984-12-11
JPH0547970B2 JPH0547970B2 (enrdf_load_stackoverflow) 1993-07-20

Family

ID=14091630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58093769A Granted JPS59219927A (ja) 1983-05-27 1983-05-27 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS59219927A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63246814A (ja) * 1987-04-02 1988-10-13 Matsushita Electric Ind Co Ltd 薄膜形成装置
WO2004087991A1 (ja) * 2003-03-31 2004-10-14 Konica Minolta Holdings, Inc. 薄膜形成装置及び薄膜形成方法
JP2008057020A (ja) * 2006-09-01 2008-03-13 Ulvac Japan Ltd 巻取式プラズマｃｖｄ装置
US20130084409A1 (en) * 2010-07-09 2013-04-04 Vito Nv Method and Device for Atmospheric Pressure Plasma Treatment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678416A (en) * 1979-11-29 1981-06-27 Sumitomo Electric Ind Ltd Preparation of thin film
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678416A (en) * 1979-11-29 1981-06-27 Sumitomo Electric Ind Ltd Preparation of thin film
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63246814A (ja) * 1987-04-02 1988-10-13 Matsushita Electric Ind Co Ltd 薄膜形成装置
WO2004087991A1 (ja) * 2003-03-31 2004-10-14 Konica Minolta Holdings, Inc. 薄膜形成装置及び薄膜形成方法
US7647887B2 (en) 2003-03-31 2010-01-19 Konica Minolta Holdings, Inc. Thin film forming apparatus
JP2008057020A (ja) * 2006-09-01 2008-03-13 Ulvac Japan Ltd 巻取式プラズマｃｖｄ装置
US20130084409A1 (en) * 2010-07-09 2013-04-04 Vito Nv Method and Device for Atmospheric Pressure Plasma Treatment
US9255330B2 (en) * 2010-07-09 2016-02-09 Vito Nv Method and device for atmospheric pressure plasma treatment

Also Published As

Publication number Publication date
JPH0547970B2 (enrdf_load_stackoverflow) 1993-07-20

Similar Documents

Publication Publication Date Title
US5714010A (en) Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same
US5397395A (en) Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same
US4585537A (en) Process for producing continuous insulated metallic substrate
US4995341A (en) Microwave plasma CVD apparatus for the formation of a large-area functional deposited film
US5567476A (en) Multi-step chemical vapor deposition method for thin film transistors
US5487786A (en) Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder
JP3249356B2 (ja) プラズマ化学蒸着装置
JP2001214277A (ja) 堆積膜形成装置および堆積膜形成方法
JPH0576172B2 (enrdf_load_stackoverflow)
JPS59219927A (ja) プラズマｃｖｄ装置
US5945353A (en) Plasma processing method
JP3310875B2 (ja) プラズマｃｖｄ装置
US6632284B2 (en) Apparatus and method for forming deposited film
JPS59219928A (ja) プラズマｃｖｄ装置
JPH06232429A (ja) 光起電力素子及びその形成方法及びその形成装置
JP2562686B2 (ja) プラズマ処理装置
JP3080515B2 (ja) ロール・ツー・ロール型マイクロ波プラズマｃｖｄ装置
JP3546095B2 (ja) プラズマｃｖｄ装置
JPH07330488A (ja) プラズマｃｖｄ装置
JPH11152577A (ja) 堆積膜形成方法および装置
JP2000104174A (ja) 半導体層の製造方法、光起電力素子の製造方法及び半導体層の製造装置
JPH06120144A (ja) プラズマｃｖｄ装置とこれによる機能性堆積膜の形成方法
JPS63274125A (ja) 高周波印加電極体構造
JPS61199626A (ja) 多層薄膜形成装置
JPH10321525A (ja) アモルファス半導体薄膜の製造装置