JPS5676538A - Formation of insulating film on semiconductor substrate - Google Patents
Formation of insulating film on semiconductor substrateInfo
- Publication number
- JPS5676538A JPS5676538A JP15403879A JP15403879A JPS5676538A JP S5676538 A JPS5676538 A JP S5676538A JP 15403879 A JP15403879 A JP 15403879A JP 15403879 A JP15403879 A JP 15403879A JP S5676538 A JPS5676538 A JP S5676538A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- insulating film
- alcoholic solution
- formation
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15403879A JPS5676538A (en) | 1979-11-28 | 1979-11-28 | Formation of insulating film on semiconductor substrate |
GB8037986A GB2064218B (en) | 1979-11-28 | 1980-11-27 | Method of forming an insulating film on a semiconductor device |
DE3044958A DE3044958C2 (de) | 1979-11-28 | 1980-11-28 | Verfahren zur Bildung eines SiO ↓2↓ enthaltenden isolierenden Films auf einem GaAs-Halbleitersubstrat und Verwendung des Verfahrens |
FR8025339A FR2471046B1 (fr) | 1979-11-28 | 1980-11-28 | Procede de formation d'une pellicule isolante sur un dispositif semi-conducteur, et dispositif ainsi obtenu, notamment transistor a effet de champ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15403879A JPS5676538A (en) | 1979-11-28 | 1979-11-28 | Formation of insulating film on semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5676538A true JPS5676538A (en) | 1981-06-24 |
Family
ID=15575550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15403879A Pending JPS5676538A (en) | 1979-11-28 | 1979-11-28 | Formation of insulating film on semiconductor substrate |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5676538A (ja) |
DE (1) | DE3044958C2 (ja) |
FR (1) | FR2471046B1 (ja) |
GB (1) | GB2064218B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6021530A (ja) * | 1983-07-16 | 1985-02-02 | New Japan Radio Co Ltd | 化合物半導体における酸化被膜 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2268327A (en) * | 1992-06-30 | 1994-01-05 | Texas Instruments Ltd | Passivated gallium arsenide device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107176A (ja) * | 1973-02-13 | 1974-10-11 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE635971A (ja) * | 1962-08-09 | |||
US3514348A (en) * | 1967-05-10 | 1970-05-26 | Ncr Co | Method for making semiconductor devices |
US3832202A (en) * | 1972-08-08 | 1974-08-27 | Motorola Inc | Liquid silica source for semiconductors liquid silica source for semiconductors |
DE2506457C3 (de) * | 1975-02-15 | 1980-01-24 | S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel | Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht |
DE2944180A1 (de) * | 1979-11-02 | 1981-05-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer einen halbleiterkoerper einseitig bedeckenden isolierschicht |
-
1979
- 1979-11-28 JP JP15403879A patent/JPS5676538A/ja active Pending
-
1980
- 1980-11-27 GB GB8037986A patent/GB2064218B/en not_active Expired
- 1980-11-28 FR FR8025339A patent/FR2471046B1/fr not_active Expired
- 1980-11-28 DE DE3044958A patent/DE3044958C2/de not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107176A (ja) * | 1973-02-13 | 1974-10-11 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6021530A (ja) * | 1983-07-16 | 1985-02-02 | New Japan Radio Co Ltd | 化合物半導体における酸化被膜 |
Also Published As
Publication number | Publication date |
---|---|
GB2064218A (en) | 1981-06-10 |
DE3044958C2 (de) | 1983-08-18 |
GB2064218B (en) | 1984-04-18 |
FR2471046B1 (fr) | 1985-10-25 |
DE3044958A1 (de) | 1981-09-17 |
FR2471046A1 (fr) | 1981-06-12 |
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