JPS5676535A - Anodization of silicon nitride film - Google Patents

Anodization of silicon nitride film

Info

Publication number
JPS5676535A
JPS5676535A JP15323979A JP15323979A JPS5676535A JP S5676535 A JPS5676535 A JP S5676535A JP 15323979 A JP15323979 A JP 15323979A JP 15323979 A JP15323979 A JP 15323979A JP S5676535 A JPS5676535 A JP S5676535A
Authority
JP
Japan
Prior art keywords
nitride film
film
silicon nitride
anodization
facilitate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15323979A
Other languages
Japanese (ja)
Other versions
JPS6412089B2 (en
Inventor
Mitsuru Sakamoto
Kuniyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15323979A priority Critical patent/JPS5676535A/en
Publication of JPS5676535A publication Critical patent/JPS5676535A/en
Publication of JPS6412089B2 publication Critical patent/JPS6412089B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To readily form an oxide film and to facilitate the working on the surface of a semiconductor substrate by implanting ions at least on a partial region of a silicon nitride film and perform anodization with ion-containing nitride film as an anode side. CONSTITUTION:A silicon nitride film 204 is formed on the entire surface of an Si substrate 201 having a silicon oxide film 203 patterned, P ions are implanted on the entire surface, the substrate is thereafter anodized with the film 204 as an anode, and the nitride film having no silicon oxide film is thus converted into a silicon oxide film 206. This can facilitate the anodization of the nitride film. Since the oxidized anodized film is generally porous and has high etching speed, it can facilitate the works such as patterning of the silicon nitride film formed on the semiconductor substrate.
JP15323979A 1979-11-27 1979-11-27 Anodization of silicon nitride film Granted JPS5676535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15323979A JPS5676535A (en) 1979-11-27 1979-11-27 Anodization of silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15323979A JPS5676535A (en) 1979-11-27 1979-11-27 Anodization of silicon nitride film

Publications (2)

Publication Number Publication Date
JPS5676535A true JPS5676535A (en) 1981-06-24
JPS6412089B2 JPS6412089B2 (en) 1989-02-28

Family

ID=15558091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15323979A Granted JPS5676535A (en) 1979-11-27 1979-11-27 Anodization of silicon nitride film

Country Status (1)

Country Link
JP (1) JPS5676535A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001514448A (en) * 1997-08-25 2001-09-11 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride / oxynitride film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141276A (en) * 1974-04-30 1975-11-13
JPS5488092A (en) * 1977-12-26 1979-07-12 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141276A (en) * 1974-04-30 1975-11-13
JPS5488092A (en) * 1977-12-26 1979-07-12 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001514448A (en) * 1997-08-25 2001-09-11 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride / oxynitride film

Also Published As

Publication number Publication date
JPS6412089B2 (en) 1989-02-28

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