JPS5674958A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5674958A
JPS5674958A JP15284279A JP15284279A JPS5674958A JP S5674958 A JPS5674958 A JP S5674958A JP 15284279 A JP15284279 A JP 15284279A JP 15284279 A JP15284279 A JP 15284279A JP S5674958 A JPS5674958 A JP S5674958A
Authority
JP
Japan
Prior art keywords
collector
layer
base
under
oxidized film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15284279A
Other languages
English (en)
Other versions
JPS6241426B2 (ja
Inventor
Satoshi Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15284279A priority Critical patent/JPS5674958A/ja
Publication of JPS5674958A publication Critical patent/JPS5674958A/ja
Publication of JPS6241426B2 publication Critical patent/JPS6241426B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP15284279A 1979-11-26 1979-11-26 Manufacture of semiconductor device Granted JPS5674958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15284279A JPS5674958A (en) 1979-11-26 1979-11-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15284279A JPS5674958A (en) 1979-11-26 1979-11-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5674958A true JPS5674958A (en) 1981-06-20
JPS6241426B2 JPS6241426B2 (ja) 1987-09-02

Family

ID=15549316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15284279A Granted JPS5674958A (en) 1979-11-26 1979-11-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5674958A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463369A (en) * 1981-06-15 1984-07-31 Rca Integrated circuit overload protection device
JPH01122161A (ja) * 1987-11-05 1989-05-15 Fuji Electric Co Ltd 縦形バイポーラトランジスタ
EP0836230A3 (en) * 1996-10-14 1998-08-05 Sharp Kabushiki Kaisha Power transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463369A (en) * 1981-06-15 1984-07-31 Rca Integrated circuit overload protection device
JPH01122161A (ja) * 1987-11-05 1989-05-15 Fuji Electric Co Ltd 縦形バイポーラトランジスタ
EP0836230A3 (en) * 1996-10-14 1998-08-05 Sharp Kabushiki Kaisha Power transistor

Also Published As

Publication number Publication date
JPS6241426B2 (ja) 1987-09-02

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