JPS567449A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS567449A
JPS567449A JP8307679A JP8307679A JPS567449A JP S567449 A JPS567449 A JP S567449A JP 8307679 A JP8307679 A JP 8307679A JP 8307679 A JP8307679 A JP 8307679A JP S567449 A JPS567449 A JP S567449A
Authority
JP
Japan
Prior art keywords
layer
high concentration
substrate
wiring
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8307679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225260B2 (enExample
Inventor
Tadashi Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8307679A priority Critical patent/JPS567449A/ja
Publication of JPS567449A publication Critical patent/JPS567449A/ja
Publication of JPS6225260B2 publication Critical patent/JPS6225260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP8307679A 1979-06-29 1979-06-29 Semiconductor device Granted JPS567449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8307679A JPS567449A (en) 1979-06-29 1979-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8307679A JPS567449A (en) 1979-06-29 1979-06-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS567449A true JPS567449A (en) 1981-01-26
JPS6225260B2 JPS6225260B2 (enExample) 1987-06-02

Family

ID=13792078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8307679A Granted JPS567449A (en) 1979-06-29 1979-06-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS567449A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181474U (enExample) * 1986-05-12 1987-11-18

Also Published As

Publication number Publication date
JPS6225260B2 (enExample) 1987-06-02

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