JPS5673470A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5673470A
JPS5673470A JP15100579A JP15100579A JPS5673470A JP S5673470 A JPS5673470 A JP S5673470A JP 15100579 A JP15100579 A JP 15100579A JP 15100579 A JP15100579 A JP 15100579A JP S5673470 A JPS5673470 A JP S5673470A
Authority
JP
Japan
Prior art keywords
ions
region
film
impurity
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15100579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244697B2 (enExample
Inventor
Shinpei Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15100579A priority Critical patent/JPS5673470A/ja
Publication of JPS5673470A publication Critical patent/JPS5673470A/ja
Publication of JPS6244697B2 publication Critical patent/JPS6244697B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP15100579A 1979-11-21 1979-11-21 Manufacture of semiconductor device Granted JPS5673470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15100579A JPS5673470A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15100579A JPS5673470A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5673470A true JPS5673470A (en) 1981-06-18
JPS6244697B2 JPS6244697B2 (enExample) 1987-09-22

Family

ID=15509199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15100579A Granted JPS5673470A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5673470A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148919A (ja) * 1984-08-17 1986-03-10 Seiko Epson Corp 半導体装置とその製造方法
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JPH0661170A (ja) * 1992-06-20 1994-03-04 Hyundai Electron Ind Co Ltd 二重注入による半導体素子の浅い接合の形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148919A (ja) * 1984-08-17 1986-03-10 Seiko Epson Corp 半導体装置とその製造方法
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JPH0661170A (ja) * 1992-06-20 1994-03-04 Hyundai Electron Ind Co Ltd 二重注入による半導体素子の浅い接合の形成方法

Also Published As

Publication number Publication date
JPS6244697B2 (enExample) 1987-09-22

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