JPS6244697B2 - - Google Patents

Info

Publication number
JPS6244697B2
JPS6244697B2 JP54151005A JP15100579A JPS6244697B2 JP S6244697 B2 JPS6244697 B2 JP S6244697B2 JP 54151005 A JP54151005 A JP 54151005A JP 15100579 A JP15100579 A JP 15100579A JP S6244697 B2 JPS6244697 B2 JP S6244697B2
Authority
JP
Japan
Prior art keywords
impurity
ion
semiconductor substrate
region
impurity region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54151005A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5673470A (en
Inventor
Shinpei Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP15100579A priority Critical patent/JPS5673470A/ja
Publication of JPS5673470A publication Critical patent/JPS5673470A/ja
Publication of JPS6244697B2 publication Critical patent/JPS6244697B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP15100579A 1979-11-21 1979-11-21 Manufacture of semiconductor device Granted JPS5673470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15100579A JPS5673470A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15100579A JPS5673470A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5673470A JPS5673470A (en) 1981-06-18
JPS6244697B2 true JPS6244697B2 (enExample) 1987-09-22

Family

ID=15509199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15100579A Granted JPS5673470A (en) 1979-11-21 1979-11-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5673470A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148919A (ja) * 1984-08-17 1986-03-10 Seiko Epson Corp 半導体装置とその製造方法
US4746964A (en) * 1986-08-28 1988-05-24 Fairchild Semiconductor Corporation Modification of properties of p-type dopants with other p-type dopants
KR960012577B1 (ko) * 1992-06-20 1996-09-23 현대전자산업 주식회사 이중주입 (Double Implant) 공정에 의한 채널형성방법

Also Published As

Publication number Publication date
JPS5673470A (en) 1981-06-18

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