JPS5671986A - Light emanating diode - Google Patents
Light emanating diodeInfo
- Publication number
- JPS5671986A JPS5671986A JP14843679A JP14843679A JPS5671986A JP S5671986 A JPS5671986 A JP S5671986A JP 14843679 A JP14843679 A JP 14843679A JP 14843679 A JP14843679 A JP 14843679A JP S5671986 A JPS5671986 A JP S5671986A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- wave length
- precipitated
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14843679A JPS5671986A (en) | 1979-11-16 | 1979-11-16 | Light emanating diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14843679A JPS5671986A (en) | 1979-11-16 | 1979-11-16 | Light emanating diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5671986A true JPS5671986A (en) | 1981-06-15 |
| JPS6133276B2 JPS6133276B2 (enExample) | 1986-08-01 |
Family
ID=15452743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14843679A Granted JPS5671986A (en) | 1979-11-16 | 1979-11-16 | Light emanating diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5671986A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191514A (ja) * | 2003-10-31 | 2005-07-14 | Toyoda Gosei Co Ltd | 発光素子および発光装置 |
| US7157294B2 (en) | 2001-06-06 | 2007-01-02 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting element |
| JP2008503891A (ja) * | 2004-06-25 | 2008-02-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 改善された光放射率プロファイルを備えるled |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63109372U (enExample) * | 1986-12-30 | 1988-07-14 |
-
1979
- 1979-11-16 JP JP14843679A patent/JPS5671986A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7157294B2 (en) | 2001-06-06 | 2007-01-02 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting element |
| JP2005191514A (ja) * | 2003-10-31 | 2005-07-14 | Toyoda Gosei Co Ltd | 発光素子および発光装置 |
| JP2008503891A (ja) * | 2004-06-25 | 2008-02-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 改善された光放射率プロファイルを備えるled |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6133276B2 (enExample) | 1986-08-01 |
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