JPS5670647A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5670647A JPS5670647A JP14791579A JP14791579A JPS5670647A JP S5670647 A JPS5670647 A JP S5670647A JP 14791579 A JP14791579 A JP 14791579A JP 14791579 A JP14791579 A JP 14791579A JP S5670647 A JPS5670647 A JP S5670647A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- film
- type
- resistance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To electrostatically shield a semiconductor device by forming a low impurity density surface layer such as a resistance element on a semiconductor substrate, coating an insulating layer on the surface of the substrate, and further forming a conductive layer grounded through the insulating layer on the surface layer of the substrate. CONSTITUTION:A resistance element such as a bipolar IC or the like is formed by forming a P type layer 4 at the time of diffusing a base into an island region 3 isolated by a P<+> type isolation region 2 with an N type epitaxial layer 3 formed on the P type Si substrate 1. A window is formed at an SiO2 film 5 coating the surface, and connecting conductors 6, 7 are formed at both ends of the layer 4. Further, an insulating film 10 is formed thereon, a metallic film 11 is formed thereon, and the film 11 is fixed to the grounding potential. Since the resistance element in the bipolar IC or the like is electrostatically shielded by the metallic film is this manner, even if a high voltage charged article is approached to the vicinity as charged with static electricity, it can prevent the variation in the characteristics due to its affect thereto.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14791579A JPS5670647A (en) | 1979-11-14 | 1979-11-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14791579A JPS5670647A (en) | 1979-11-14 | 1979-11-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5670647A true JPS5670647A (en) | 1981-06-12 |
Family
ID=15440969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14791579A Pending JPS5670647A (en) | 1979-11-14 | 1979-11-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5670647A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112271171A (en) * | 2017-11-13 | 2021-01-26 | 住友电气工业株式会社 | Semiconductor device and amplifier assembly |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53103385A (en) * | 1977-02-22 | 1978-09-08 | Seiko Instr & Electronics Ltd | Integrated circuit for watches |
-
1979
- 1979-11-14 JP JP14791579A patent/JPS5670647A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53103385A (en) * | 1977-02-22 | 1978-09-08 | Seiko Instr & Electronics Ltd | Integrated circuit for watches |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112271171A (en) * | 2017-11-13 | 2021-01-26 | 住友电气工业株式会社 | Semiconductor device and amplifier assembly |
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