JPS57117236A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57117236A JPS57117236A JP339381A JP339381A JPS57117236A JP S57117236 A JPS57117236 A JP S57117236A JP 339381 A JP339381 A JP 339381A JP 339381 A JP339381 A JP 339381A JP S57117236 A JPS57117236 A JP S57117236A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductor
- shielding effect
- coated
- whole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 230000005484 gravity Effects 0.000 abstract 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To raise the level of the protection of quality by coating the whole surface of a semiconductor with a conductor film through an insulating film. CONSTITUTION:A molybdenum silicide film 6 having 3mum thickness is formed onto a PSG film 3 as a conductor. The film 6 is connected to an Si substrate 1 by a scribing line and made the same potential. The film 6 is further coated with an SiO2 film 7 through a CVD method, and a bonding pad section 4 is bored. Accordingly, since the whole is coated with the conductor, static electricity resisting property is large, a shielding effect to radiation is large particularly when elements having large specific gravity, such as W, Mo, Pt, Ta, Au, etc. are used as the conductor film, and a large shielding effect is obtained against the intrusion of external pollution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP339381A JPS57117236A (en) | 1981-01-13 | 1981-01-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP339381A JPS57117236A (en) | 1981-01-13 | 1981-01-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57117236A true JPS57117236A (en) | 1982-07-21 |
Family
ID=11556110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP339381A Pending JPS57117236A (en) | 1981-01-13 | 1981-01-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57117236A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6344461U (en) * | 1986-09-05 | 1988-03-25 | ||
| JPH01315163A (en) * | 1988-02-12 | 1989-12-20 | Mitsubishi Electric Corp | Manufacture of semiconductor integrated circuit device |
| JPH0262045A (en) * | 1988-08-26 | 1990-03-01 | Mitsubishi Electric Corp | Semiconductor device |
-
1981
- 1981-01-13 JP JP339381A patent/JPS57117236A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6344461U (en) * | 1986-09-05 | 1988-03-25 | ||
| JPH01315163A (en) * | 1988-02-12 | 1989-12-20 | Mitsubishi Electric Corp | Manufacture of semiconductor integrated circuit device |
| JPH0262045A (en) * | 1988-08-26 | 1990-03-01 | Mitsubishi Electric Corp | Semiconductor device |
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