JPS5670645A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5670645A
JPS5670645A JP14732179A JP14732179A JPS5670645A JP S5670645 A JPS5670645 A JP S5670645A JP 14732179 A JP14732179 A JP 14732179A JP 14732179 A JP14732179 A JP 14732179A JP S5670645 A JPS5670645 A JP S5670645A
Authority
JP
Japan
Prior art keywords
film
substrate
forming
mask
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14732179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS628023B2 (enExample
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14732179A priority Critical patent/JPS5670645A/ja
Publication of JPS5670645A publication Critical patent/JPS5670645A/ja
Publication of JPS628023B2 publication Critical patent/JPS628023B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1908—Preparing SOI wafers using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP14732179A 1979-11-14 1979-11-14 Manufacture of semiconductor device Granted JPS5670645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14732179A JPS5670645A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14732179A JPS5670645A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5670645A true JPS5670645A (en) 1981-06-12
JPS628023B2 JPS628023B2 (enExample) 1987-02-20

Family

ID=15427532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14732179A Granted JPS5670645A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5670645A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563377A1 (fr) * 1984-04-19 1985-10-25 Commissariat Energie Atomique Procede de fabrication d'une couche isolante enterree dans un substrat semi-conducteur, par implantation ionique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563377A1 (fr) * 1984-04-19 1985-10-25 Commissariat Energie Atomique Procede de fabrication d'une couche isolante enterree dans un substrat semi-conducteur, par implantation ionique

Also Published As

Publication number Publication date
JPS628023B2 (enExample) 1987-02-20

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