JPS5666042A - Minute processing method of thin film - Google Patents

Minute processing method of thin film

Info

Publication number
JPS5666042A
JPS5666042A JP14241179A JP14241179A JPS5666042A JP S5666042 A JPS5666042 A JP S5666042A JP 14241179 A JP14241179 A JP 14241179A JP 14241179 A JP14241179 A JP 14241179A JP S5666042 A JPS5666042 A JP S5666042A
Authority
JP
Japan
Prior art keywords
film
etched
sio2
etch
eaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14241179A
Other languages
English (en)
Inventor
Masakazu Shiozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14241179A priority Critical patent/JPS5666042A/ja
Publication of JPS5666042A publication Critical patent/JPS5666042A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP14241179A 1979-11-02 1979-11-02 Minute processing method of thin film Pending JPS5666042A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14241179A JPS5666042A (en) 1979-11-02 1979-11-02 Minute processing method of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14241179A JPS5666042A (en) 1979-11-02 1979-11-02 Minute processing method of thin film

Publications (1)

Publication Number Publication Date
JPS5666042A true JPS5666042A (en) 1981-06-04

Family

ID=15314707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14241179A Pending JPS5666042A (en) 1979-11-02 1979-11-02 Minute processing method of thin film

Country Status (1)

Country Link
JP (1) JPS5666042A (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125980A (ja) * 1974-08-28 1976-03-03 Hitachi Ltd Setsugogatadenkaikokatoranjisuta no seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125980A (ja) * 1974-08-28 1976-03-03 Hitachi Ltd Setsugogatadenkaikokatoranjisuta no seizohoho

Similar Documents

Publication Publication Date Title
JPS5669835A (en) Method for forming thin film pattern
JPS57130431A (en) Manufacture of semiconductor device
JPS5666042A (en) Minute processing method of thin film
JPS5742151A (en) Formation of pattern
JPS55140231A (en) Manufacture of semiconductor element
JPS5772333A (en) Manufacture of semiconductor device
JPS5585674A (en) Detecting method for etching end point
JPS562633A (en) Etching method
JPS56277A (en) Forming method of metal layer pattern
JPS5687343A (en) Forming method of wiring
JPS55130140A (en) Fabricating method of semiconductor device
JPS5680130A (en) Manufacture of semiconductor device
JPS55150230A (en) Method of forming metallic pattern for semiconductor device
JPS5661124A (en) Forming method of thin film on substrate having stepped part
JPS54107277A (en) Production of semiconductor device
JPS5687342A (en) Manufacture of semiconductor device
JPS5667927A (en) Thin film etching method of electronic parts
JPS56138941A (en) Forming method of wiring layer
JPS5633841A (en) Manufacture of semiconductor device
JPS55124233A (en) Manufacturing method of semiconductor device
JPS56150829A (en) Manufacture of aperture iris
JPS5626442A (en) Method for pattern formation
JPS553638A (en) Dry etcing
JPS5681954A (en) Manufacture of semiconductor ic
JPS57102050A (en) Manufacture of semiconductor device