JPS566443A - Laser annealing method - Google Patents

Laser annealing method

Info

Publication number
JPS566443A
JPS566443A JP8070279A JP8070279A JPS566443A JP S566443 A JPS566443 A JP S566443A JP 8070279 A JP8070279 A JP 8070279A JP 8070279 A JP8070279 A JP 8070279A JP S566443 A JPS566443 A JP S566443A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor
laser beam
refraction
refraction index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8070279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5741819B2 (enrdf_load_stackoverflow
Inventor
Yoshio Komiya
Kikuo Yamabe
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8070279A priority Critical patent/JPS566443A/ja
Publication of JPS566443A publication Critical patent/JPS566443A/ja
Publication of JPS5741819B2 publication Critical patent/JPS5741819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP8070279A 1979-06-28 1979-06-28 Laser annealing method Granted JPS566443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8070279A JPS566443A (en) 1979-06-28 1979-06-28 Laser annealing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8070279A JPS566443A (en) 1979-06-28 1979-06-28 Laser annealing method

Publications (2)

Publication Number Publication Date
JPS566443A true JPS566443A (en) 1981-01-23
JPS5741819B2 JPS5741819B2 (enrdf_load_stackoverflow) 1982-09-04

Family

ID=13725655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8070279A Granted JPS566443A (en) 1979-06-28 1979-06-28 Laser annealing method

Country Status (1)

Country Link
JP (1) JPS566443A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112013A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957794U (ja) * 1982-10-09 1984-04-14 井関農機株式会社 循環式乾燥装置の伝動装置
JPS6428794U (enrdf_load_stackoverflow) * 1987-08-15 1989-02-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112013A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5741819B2 (enrdf_load_stackoverflow) 1982-09-04

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