JPS57118685A - Coupling of semiconductor laser and photo waveguide - Google Patents
Coupling of semiconductor laser and photo waveguideInfo
- Publication number
- JPS57118685A JPS57118685A JP558981A JP558981A JPS57118685A JP S57118685 A JPS57118685 A JP S57118685A JP 558981 A JP558981 A JP 558981A JP 558981 A JP558981 A JP 558981A JP S57118685 A JPS57118685 A JP S57118685A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- well
- waveguide
- photo
- coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To facilitate the coupling of a semiconductor laser and a photo waveguide by a method wherein a well is created in a substrate whereon a photo waveguide has been constructed and the bottom of the well is coated with a metal film and a semiconductor laser chip is fixedly inserted in the well. CONSTITUTION:Ti or the like is diffused into an electro-optical crystal substrate 1 composed exemplifiedly of LiNbO3 or LiTaO3 for the creation of a thin film photo waveguide 2. A part of the waveguide 2 is subjected to plasma etching for the formation of a well 3. Au or the like is evaporated and deposited on the bottom surface of the well 3 to construct an electrode metal film 4. Then a semiconductor laser 5 with a stripe shaped electrode 7 is fitted into the well 3 so that the active layer 6 of the semiconductor laser 5 and the photo waveguide 2 may be in alignment with each other. This method facilitates the coupling of a semiconductor laser with a photo waveguide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP558981A JPS57118685A (en) | 1981-01-16 | 1981-01-16 | Coupling of semiconductor laser and photo waveguide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP558981A JPS57118685A (en) | 1981-01-16 | 1981-01-16 | Coupling of semiconductor laser and photo waveguide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57118685A true JPS57118685A (en) | 1982-07-23 |
Family
ID=11615420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP558981A Pending JPS57118685A (en) | 1981-01-16 | 1981-01-16 | Coupling of semiconductor laser and photo waveguide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57118685A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60127778A (en) * | 1983-12-15 | 1985-07-08 | Matsushita Electric Ind Co Ltd | Semiconductor laser integrated photoconductive element |
JP2004079168A (en) * | 1995-04-13 | 2004-03-11 | Denso Corp | Optical head for optical recording and reproducing device |
JP2008227358A (en) * | 2007-03-15 | 2008-09-25 | Sharp Corp | Light emission device and light transmission module |
-
1981
- 1981-01-16 JP JP558981A patent/JPS57118685A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60127778A (en) * | 1983-12-15 | 1985-07-08 | Matsushita Electric Ind Co Ltd | Semiconductor laser integrated photoconductive element |
JP2004079168A (en) * | 1995-04-13 | 2004-03-11 | Denso Corp | Optical head for optical recording and reproducing device |
JP2008227358A (en) * | 2007-03-15 | 2008-09-25 | Sharp Corp | Light emission device and light transmission module |
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