JPS56116686A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS56116686A
JPS56116686A JP2025880A JP2025880A JPS56116686A JP S56116686 A JPS56116686 A JP S56116686A JP 2025880 A JP2025880 A JP 2025880A JP 2025880 A JP2025880 A JP 2025880A JP S56116686 A JPS56116686 A JP S56116686A
Authority
JP
Japan
Prior art keywords
exposed
ohmic electrode
type
cavity
square
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025880A
Other languages
Japanese (ja)
Inventor
Takashi Sugino
Masaru Wada
Yuichi Shimizu
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2025880A priority Critical patent/JPS56116686A/en
Publication of JPS56116686A publication Critical patent/JPS56116686A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable two laser beams to be drawn out in the same direction or in the directions at right angles by a method wherein the cavity is provided with a flex portion, and a reflecting film is formed thereon. CONSTITUTION:On the 100 surface of an N type substrate 9, an N type clad layer 10, an active layer 11, a P type clad layer 12 and an ohmic electrode forming layer 13 are successively grown. Then, a stripe-shape P type ohmic electrode 14 is formed into a square. Then, each corner portion of the electrode 14 is ethced so that a surface perpendicular to the diagonal line of the square is exposed. In this case, the grown crystal surface exposed by etching is perpendicular to the 100 surface. Then, the exposed crytal side surfaces are coated with insulating films 15, and gold 16 is deposited thereon. Thereafter, an ohmic electrode 17 is formed on the substrate 9. Then, this is cleaved to form cavity surfaces 18. Thereby, the flexed cavity portion is provided with a reflecting mirror, so that laser beams can be made to go out in the same direction or in the directions at right angles.
JP2025880A 1980-02-19 1980-02-19 Semiconductor laser device Pending JPS56116686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025880A JPS56116686A (en) 1980-02-19 1980-02-19 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2025880A JPS56116686A (en) 1980-02-19 1980-02-19 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS56116686A true JPS56116686A (en) 1981-09-12

Family

ID=12022165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025880A Pending JPS56116686A (en) 1980-02-19 1980-02-19 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS56116686A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122091A (en) * 1976-04-06 1977-10-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122091A (en) * 1976-04-06 1977-10-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

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