JPS5637686A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5637686A
JPS5637686A JP11371379A JP11371379A JPS5637686A JP S5637686 A JPS5637686 A JP S5637686A JP 11371379 A JP11371379 A JP 11371379A JP 11371379 A JP11371379 A JP 11371379A JP S5637686 A JPS5637686 A JP S5637686A
Authority
JP
Japan
Prior art keywords
layer
plane
type inp
stripe
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11371379A
Other languages
Japanese (ja)
Inventor
Toshihiro Kusuki
Yorimitsu Nishitani
Hiroshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11371379A priority Critical patent/JPS5637686A/en
Publication of JPS5637686A publication Critical patent/JPS5637686A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To form the side surface of high refractive index layer in a semiconductor laser device in the same shape with preferable reproducibility by forming a (001) plane with the crystal junction surface of a semiconductor element and forming a stripe structure in special crystal orientation on the junction surface. CONSTITUTION:There are sequentially formed an N type InP layer as a clad layer, an InGaP layer 3 as an active layer, a P type InP layer 4 as the second clad layer and an InGaAs layer 5 as a high refractive index layer on an N type InP substrate. With an oxide Si layer coated selectively on the layer 5 as a mask a stripe region having a light emission width W is etched. In this case, the substrate 1 is used on the (001) plane. Accordingly, the growing surface thereon becomes all (001) plane, and stripe is formed in a direction of (1, bar 1, 0) with respect to the plane. According to this configuration, the inclining angle is abruptly 70+ or -2 deg., and there can be obtained a side surface having less irregularity with low tapered gradient DELTAW.
JP11371379A 1979-09-05 1979-09-05 Semiconductor laser device Pending JPS5637686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11371379A JPS5637686A (en) 1979-09-05 1979-09-05 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11371379A JPS5637686A (en) 1979-09-05 1979-09-05 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5637686A true JPS5637686A (en) 1981-04-11

Family

ID=14619258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11371379A Pending JPS5637686A (en) 1979-09-05 1979-09-05 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5637686A (en)

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