JPS5660053A - Manufacture of semiconductor memory device - Google Patents

Manufacture of semiconductor memory device

Info

Publication number
JPS5660053A
JPS5660053A JP14569780A JP14569780A JPS5660053A JP S5660053 A JPS5660053 A JP S5660053A JP 14569780 A JP14569780 A JP 14569780A JP 14569780 A JP14569780 A JP 14569780A JP S5660053 A JPS5660053 A JP S5660053A
Authority
JP
Japan
Prior art keywords
electrode
insulating film
forming
gate
operating speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14569780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6221273B2 (enrdf_load_stackoverflow
Inventor
Fujio Masuoka
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14569780A priority Critical patent/JPS5660053A/ja
Publication of JPS5660053A publication Critical patent/JPS5660053A/ja
Publication of JPS6221273B2 publication Critical patent/JPS6221273B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP14569780A 1980-10-20 1980-10-20 Manufacture of semiconductor memory device Granted JPS5660053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14569780A JPS5660053A (en) 1980-10-20 1980-10-20 Manufacture of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14569780A JPS5660053A (en) 1980-10-20 1980-10-20 Manufacture of semiconductor memory device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50154769A Division JPS5279679A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5660053A true JPS5660053A (en) 1981-05-23
JPS6221273B2 JPS6221273B2 (enrdf_load_stackoverflow) 1987-05-12

Family

ID=15391009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14569780A Granted JPS5660053A (en) 1980-10-20 1980-10-20 Manufacture of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5660053A (enrdf_load_stackoverflow)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TECHNICAL DISCLOSURE BULLETIN *

Also Published As

Publication number Publication date
JPS6221273B2 (enrdf_load_stackoverflow) 1987-05-12

Similar Documents

Publication Publication Date Title
JPS5570060A (en) Semiconductor device
JPS5660052A (en) Semiconductor memory device
JPS56107571A (en) Semiconductor memory storage device
JPS5660053A (en) Manufacture of semiconductor memory device
JPS5683075A (en) Insulating gate type field-effect transistor circuit device
JPS5275187A (en) Mos type semiconductor device
JPS56110264A (en) High withstand voltage mos transistor
JPS5660051A (en) Semiconductor memory device
JPS6435958A (en) Thin film transistor
JPS5526666A (en) Insulated gate type semiconductor device
JPS57176757A (en) Semiconductor device
JPS5688366A (en) Semiconductor device
JPS57104264A (en) Semiconductor memory cell
JPS52130580A (en) High densityintegrated circuit device
JPS5690538A (en) Semiconductor device
JPS5736868A (en) Manufacture of nonvolatile semiconductor memory device
JPS56104461A (en) Semiconductor memory device
JPS5736865A (en) Semiconductor device
JPS5522885A (en) Insulation gate type field effect semiconductor device
JPS57145374A (en) Mis type semiconductor integrated circuit device
JPS5552262A (en) Mos semiconductor device
JPS56104462A (en) Semiconductor memory device
JPS6425465A (en) Semiconductor storage device
JPS6437058A (en) Insulated-gate field-effect transistor
JPS6437877A (en) Semiconductor storage device