JPS5660049A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS5660049A
JPS5660049A JP14579380A JP14579380A JPS5660049A JP S5660049 A JPS5660049 A JP S5660049A JP 14579380 A JP14579380 A JP 14579380A JP 14579380 A JP14579380 A JP 14579380A JP S5660049 A JPS5660049 A JP S5660049A
Authority
JP
Japan
Prior art keywords
region
layer
transistor
transversal
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14579380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6140140B2 (enrdf_load_stackoverflow
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14579380A priority Critical patent/JPS5660049A/ja
Publication of JPS5660049A publication Critical patent/JPS5660049A/ja
Publication of JPS6140140B2 publication Critical patent/JPS6140140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP14579380A 1980-10-20 1980-10-20 Manufacture of semiconductor integrated circuit device Granted JPS5660049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14579380A JPS5660049A (en) 1980-10-20 1980-10-20 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14579380A JPS5660049A (en) 1980-10-20 1980-10-20 Manufacture of semiconductor integrated circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5780773A Division JPS579222B2 (enrdf_load_stackoverflow) 1973-05-25 1973-05-25

Publications (2)

Publication Number Publication Date
JPS5660049A true JPS5660049A (en) 1981-05-23
JPS6140140B2 JPS6140140B2 (enrdf_load_stackoverflow) 1986-09-08

Family

ID=15393281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14579380A Granted JPS5660049A (en) 1980-10-20 1980-10-20 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5660049A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135965U (ja) * 1982-03-05 1983-09-13 日本電気ホームエレクトロニクス株式会社 ラテラル型トランジスタ素子
JP2002026138A (ja) * 2000-07-07 2002-01-25 Sanyo Electric Co Ltd 半導体装置
US7135364B2 (en) 2001-04-25 2006-11-14 Sanken Electric Co., Ltd. Method of fabricating semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135965U (ja) * 1982-03-05 1983-09-13 日本電気ホームエレクトロニクス株式会社 ラテラル型トランジスタ素子
JP2002026138A (ja) * 2000-07-07 2002-01-25 Sanyo Electric Co Ltd 半導体装置
US7135364B2 (en) 2001-04-25 2006-11-14 Sanken Electric Co., Ltd. Method of fabricating semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6140140B2 (enrdf_load_stackoverflow) 1986-09-08

Similar Documents

Publication Publication Date Title
JPS5660049A (en) Manufacture of semiconductor integrated circuit device
JPS572519A (en) Manufacture of semiconductor device
JPS572568A (en) Semiconductor device
JPS54107270A (en) Semiconductor device and its production
JPS55151359A (en) Semiconductor device
JPS56142661A (en) Semiconductor integrated circuit and manufacture thereof
JPS57201063A (en) Manufacture of semiconductor device
JPS5710968A (en) Semiconductor device
JPS5522878A (en) Insulation gate type field effect semiconductor device
JPS56133869A (en) Mos type semiconductor device and manufacture thereof
JPS55165650A (en) Semiconductor integrated circuit
JPS56122164A (en) High withstand voltage semiconductor device
JPS54142982A (en) Field effect semiconductor device of junction type and its manufacture
JPS57122568A (en) Semiconductor device
JPS5776872A (en) Semiconductor device
JPS5749249A (en) Semiconductor integrated circuit device
JPS56115556A (en) Semiconductor integrated circuit device
JPS5484980A (en) Semiconductor device
JPS56115563A (en) Semiconductor device
JPS5710961A (en) Semiconductor device and manufacture thereof
JPS5617057A (en) Semiconductor inverter circuit element
JPS566469A (en) Manufacture of semiconductor device
JPS5580344A (en) Manufacture of semiconductor integrated circuit
JPS5660065A (en) Semiconductor device
JPS55111169A (en) Method of manufacturing semiconductor device