JPS5656668A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5656668A JPS5656668A JP13390279A JP13390279A JPS5656668A JP S5656668 A JPS5656668 A JP S5656668A JP 13390279 A JP13390279 A JP 13390279A JP 13390279 A JP13390279 A JP 13390279A JP S5656668 A JPS5656668 A JP S5656668A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- window
- emitter
- emitter region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a low-noise planar-type transistor with reduced number of processes by a method wherein an emitter region which has the large diffusion depth and high density of impurities, and another emitter region which surrounds the former and has small depth and low density of impurites are formed in the same stage of preparation. CONSTITUTION:On the back surface of an n type Si substrate 1 which becomes a collector region is formed an n<+> type layer 2 diffusively, while on the front surface thereof is provided an SiO2 film 3, and in the window made in the film is formed a p type base region 4 diffusively. Next, an SiO2 film 5 is fitted on to the region 4 exposed in the window, while a window 15a of width W1 is made, positioned in the central part of the region 4, and further a window 15b of width W2 is opened around the window 15a, apart in a distance of 2-3m from the latter. After that, n type impurities are diffused within the region 4 exposed in these windows 15a and 15b, thereby the deep n<+> type emitter region 16 and the shallow n type emitter region 17 are formed therein, and the regions 16 and 17 are connected with each other by making use of the short distance S between the windows 15a and 15b. After thus being constituted, an emitter, base and collector electrode 8-10 are attached to respective regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13390279A JPS5656668A (en) | 1979-10-13 | 1979-10-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13390279A JPS5656668A (en) | 1979-10-13 | 1979-10-13 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5656668A true JPS5656668A (en) | 1981-05-18 |
Family
ID=15115765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13390279A Pending JPS5656668A (en) | 1979-10-13 | 1979-10-13 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5656668A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49122672A (en) * | 1973-03-24 | 1974-11-22 | ||
| JPS5052970A (en) * | 1973-09-10 | 1975-05-10 |
-
1979
- 1979-10-13 JP JP13390279A patent/JPS5656668A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49122672A (en) * | 1973-03-24 | 1974-11-22 | ||
| JPS5052970A (en) * | 1973-09-10 | 1975-05-10 |
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