JPS5655076A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS5655076A
JPS5655076A JP13233779A JP13233779A JPS5655076A JP S5655076 A JPS5655076 A JP S5655076A JP 13233779 A JP13233779 A JP 13233779A JP 13233779 A JP13233779 A JP 13233779A JP S5655076 A JPS5655076 A JP S5655076A
Authority
JP
Japan
Prior art keywords
region
fet
field effect
effect transistor
punch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13233779A
Other languages
Japanese (ja)
Inventor
Kosuke Yasuno
Kosei Kajiwara
Tatsunori Nakajima
Kazutoshi Nagano
Seiji Onaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13233779A priority Critical patent/JPS5655076A/en
Publication of JPS5655076A publication Critical patent/JPS5655076A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Abstract

PURPOSE:To contrive the increase in the accuracy of a junction type field effect transistor by providing a J-FET in an isolating region and preventing a punch through. CONSTITUTION:When a source region 5 and a drain region 6 are formed from the surface in the isolating region 3 of a J-FET, there is a region 7 of reverse conductivity type to the region 3 formed simultaneously. This region 7 is connected electrically directly with the region 3 through a metallic electrode 8 when forming an electrode. Accordingly, the J-FET having a channel at the side of the region 3 is formed at the portion. In the J-FET the region 7 becomes a gate and the portion between the region 7 and the region 2 becomes a channel. That is, a J-FET Q1 having a channel at the side of the region 3 is connected to the substrate-grounded J- FET Q2. When a punch through current tends to flow, a voltage drop will occur in the Q2, thereby preventing beforehand the punch through phenomenon.
JP13233779A 1979-10-12 1979-10-12 Junction type field effect transistor Pending JPS5655076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13233779A JPS5655076A (en) 1979-10-12 1979-10-12 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13233779A JPS5655076A (en) 1979-10-12 1979-10-12 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5655076A true JPS5655076A (en) 1981-05-15

Family

ID=15078964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13233779A Pending JPS5655076A (en) 1979-10-12 1979-10-12 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5655076A (en)

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