JPS5654434A - Radiation and far ultraviolet ray sensitive positive type resist method - Google Patents

Radiation and far ultraviolet ray sensitive positive type resist method

Info

Publication number
JPS5654434A
JPS5654434A JP12994879A JP12994879A JPS5654434A JP S5654434 A JPS5654434 A JP S5654434A JP 12994879 A JP12994879 A JP 12994879A JP 12994879 A JP12994879 A JP 12994879A JP S5654434 A JPS5654434 A JP S5654434A
Authority
JP
Japan
Prior art keywords
monomer
radiation
positive type
formula
far ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12994879A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0119135B2 (enrdf_load_stackoverflow
Inventor
Motoyasu Saito
Nobuyuki Watamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kohjin Holdings Co Ltd
Kojin Co Ltd
Original Assignee
Kohjin Holdings Co Ltd
Kojin Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kohjin Holdings Co Ltd, Kojin Co Ltd filed Critical Kohjin Holdings Co Ltd
Priority to JP12994879A priority Critical patent/JPS5654434A/ja
Publication of JPS5654434A publication Critical patent/JPS5654434A/ja
Publication of JPH0119135B2 publication Critical patent/JPH0119135B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Polymerisation Methods In General (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP12994879A 1979-10-11 1979-10-11 Radiation and far ultraviolet ray sensitive positive type resist method Granted JPS5654434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12994879A JPS5654434A (en) 1979-10-11 1979-10-11 Radiation and far ultraviolet ray sensitive positive type resist method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12994879A JPS5654434A (en) 1979-10-11 1979-10-11 Radiation and far ultraviolet ray sensitive positive type resist method

Publications (2)

Publication Number Publication Date
JPS5654434A true JPS5654434A (en) 1981-05-14
JPH0119135B2 JPH0119135B2 (enrdf_load_stackoverflow) 1989-04-10

Family

ID=15022388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12994879A Granted JPS5654434A (en) 1979-10-11 1979-10-11 Radiation and far ultraviolet ray sensitive positive type resist method

Country Status (1)

Country Link
JP (1) JPS5654434A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118240A (en) * 1980-09-29 1982-07-23 Siemens Ag Manufacture of resist structural body
JPS57196232A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> High sensitive and positive type resist
JPH01217341A (ja) * 1988-02-25 1989-08-30 Toppan Printing Co Ltd ポジ型電子線レジストのパターン形成方法
JPH022564A (ja) * 1988-06-15 1990-01-08 Toagosei Chem Ind Co Ltd ポジ型電子線レジスト
JPH0258060A (ja) * 1988-08-24 1990-02-27 Toagosei Chem Ind Co Ltd ポジ型レジスト
JPH02113256A (ja) * 1988-10-24 1990-04-25 Toppan Printing Co Ltd ポジ型電子線レジストパターンの形成方法
JPH02113253A (ja) * 1988-10-24 1990-04-25 Toagosei Chem Ind Co Ltd ポジ型レジスト
JPH02275462A (ja) * 1989-04-17 1990-11-09 Toppan Printing Co Ltd 電子ビームレジストのパターン形成方法
JPH0328851A (ja) * 1988-05-24 1991-02-07 Toppan Printing Co Ltd 電子ビームレジストのパターン形成方法
JPH05289339A (ja) * 1992-04-08 1993-11-05 Toppan Printing Co Ltd ポジ型電子線レジスト
KR100557529B1 (ko) * 2001-06-29 2006-03-03 주식회사 하이닉스반도체 화학증폭형 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
JP2006525295A (ja) * 2003-04-30 2006-11-09 テート アンド ライル パブリック リミテッド カンパニー 改良されたスクラロースの結晶形態およびその製造方法
WO2014141876A1 (ja) * 2013-03-15 2014-09-18 富士フイルム株式会社 パターン形成方法、これに用いられる有機溶剤現像用の感活性光線性又は感放射線性樹脂組成物及びその製造方法、電子デバイスの製造方法、並びに、電子デバイス

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118240A (en) * 1980-09-29 1982-07-23 Siemens Ag Manufacture of resist structural body
JPS57196232A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> High sensitive and positive type resist
JPH01217341A (ja) * 1988-02-25 1989-08-30 Toppan Printing Co Ltd ポジ型電子線レジストのパターン形成方法
JPH0328851A (ja) * 1988-05-24 1991-02-07 Toppan Printing Co Ltd 電子ビームレジストのパターン形成方法
JPH022564A (ja) * 1988-06-15 1990-01-08 Toagosei Chem Ind Co Ltd ポジ型電子線レジスト
JPH0258060A (ja) * 1988-08-24 1990-02-27 Toagosei Chem Ind Co Ltd ポジ型レジスト
JPH02113253A (ja) * 1988-10-24 1990-04-25 Toagosei Chem Ind Co Ltd ポジ型レジスト
JPH02113256A (ja) * 1988-10-24 1990-04-25 Toppan Printing Co Ltd ポジ型電子線レジストパターンの形成方法
JPH02275462A (ja) * 1989-04-17 1990-11-09 Toppan Printing Co Ltd 電子ビームレジストのパターン形成方法
JPH05289339A (ja) * 1992-04-08 1993-11-05 Toppan Printing Co Ltd ポジ型電子線レジスト
KR100557529B1 (ko) * 2001-06-29 2006-03-03 주식회사 하이닉스반도체 화학증폭형 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
JP2006525295A (ja) * 2003-04-30 2006-11-09 テート アンド ライル パブリック リミテッド カンパニー 改良されたスクラロースの結晶形態およびその製造方法
JP4809763B2 (ja) * 2003-04-30 2011-11-09 テート アンド ライル テクノロジー リミテッド 改良されたスクラロースの結晶形態およびその製造方法
JP2011225591A (ja) * 2003-04-30 2011-11-10 Tate & Lyle Technology Ltd 改良されたスクラロースの結晶形態およびその製造方法
WO2014141876A1 (ja) * 2013-03-15 2014-09-18 富士フイルム株式会社 パターン形成方法、これに用いられる有機溶剤現像用の感活性光線性又は感放射線性樹脂組成物及びその製造方法、電子デバイスの製造方法、並びに、電子デバイス
JP2014178566A (ja) * 2013-03-15 2014-09-25 Fujifilm Corp パターン形成方法、これに用いられる有機溶剤現像用の感活性光線性又は感放射線性樹脂組成物及びその製造方法、電子デバイスの製造方法、並びに、電子デバイス
TWI594077B (zh) * 2013-03-15 2017-08-01 富士軟片股份有限公司 圖案形成方法及其電子元件的製造方法

Also Published As

Publication number Publication date
JPH0119135B2 (enrdf_load_stackoverflow) 1989-04-10

Similar Documents

Publication Publication Date Title
JPS5654434A (en) Radiation and far ultraviolet ray sensitive positive type resist method
JPS5518638A (en) Ionized radiation sensitive positive type resist
US3330659A (en) Photographic product and method of making same
JPS5678834A (en) Photographic sensitive material
JPH03223860A (ja) 新規レジスト材料
US3101270A (en) Photopolymerization of unsaturated organic compounds by means of radiation sensitive iron compounds as photoinitiators
US4318976A (en) High gel rigidity, negative electron beam resists
JPS5653114A (en) Preparation of polymeric material for positive resist sensitive to radiation and far ultraviolet rays
Willson et al. Poly (methyl α‐trifluoromethylacrylate) as a positive electron beam resist
EP0106293A3 (en) Process for polymerization of acrylate or methacrylate
JPS5639539A (en) Pattern forming method
US4617254A (en) Process for forming detailed images
JPS5614232A (en) Negative type resist resin
JPH087441B2 (ja) ポジ型高感度放射線感応性レジスト
JPS55147624A (en) Ionized radiation sensitive positive type resist
JPS5817105A (ja) 電離放射線感応性材料
Guyot et al. Acrylonitrile Copolymerizations. VI. Influence of the Comonomer on the Intramolecular Cyclization Reaction
JPS56137348A (en) Negative type ionized radiation sensitive resist
JPS5643634A (en) Negative type resist material
JPS572309A (en) Methyl methacrylate polymer
JPS55149940A (en) Negative type resist material
JPS6368612A (ja) α−トリフルオロメチルアクリル酸共重合体
JPS57159804A (en) Radiation-sensitive organic high-molecular material
JPS5734550A (en) Formation of pattern
JPS5456375A (en) Positive type resist for dry etching