JPS5651580A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5651580A JPS5651580A JP12531879A JP12531879A JPS5651580A JP S5651580 A JPS5651580 A JP S5651580A JP 12531879 A JP12531879 A JP 12531879A JP 12531879 A JP12531879 A JP 12531879A JP S5651580 A JPS5651580 A JP S5651580A
- Authority
- JP
- Japan
- Prior art keywords
- contg
- gas
- subjecting
- plasma etching
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000001020 plasma etching Methods 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12531879A JPS5651580A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12531879A JPS5651580A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5651580A true JPS5651580A (en) | 1981-05-09 |
| JPS628512B2 JPS628512B2 (enExample) | 1987-02-23 |
Family
ID=14907132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12531879A Granted JPS5651580A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5651580A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59110119A (ja) * | 1982-12-15 | 1984-06-26 | Nec Corp | 半導体層の表面処理方法 |
| JPS59201426A (ja) * | 1983-04-29 | 1984-11-15 | Sony Corp | 半導体基体の処理方法 |
| JPS61147530A (ja) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | 配線形成方法 |
| JPS6466544A (en) * | 1987-09-08 | 1989-03-13 | Fuji Photo Film Co Ltd | Chemical analyzer |
| JPH01206620A (ja) * | 1988-02-15 | 1989-08-18 | Toshiba Corp | 半導体装置の製造方法 |
| WO2017110335A1 (ja) * | 2015-12-25 | 2017-06-29 | 東京エレクトロン株式会社 | 基板処理方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243615A (ja) * | 1987-03-31 | 1988-10-11 | Matsushita Electric Ind Co Ltd | 液体燃料燃焼装置 |
-
1979
- 1979-10-01 JP JP12531879A patent/JPS5651580A/ja active Granted
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59110119A (ja) * | 1982-12-15 | 1984-06-26 | Nec Corp | 半導体層の表面処理方法 |
| JPS59201426A (ja) * | 1983-04-29 | 1984-11-15 | Sony Corp | 半導体基体の処理方法 |
| JPS61147530A (ja) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | 配線形成方法 |
| JPS6466544A (en) * | 1987-09-08 | 1989-03-13 | Fuji Photo Film Co Ltd | Chemical analyzer |
| JPH01206620A (ja) * | 1988-02-15 | 1989-08-18 | Toshiba Corp | 半導体装置の製造方法 |
| WO2017110335A1 (ja) * | 2015-12-25 | 2017-06-29 | 東京エレクトロン株式会社 | 基板処理方法 |
| KR20180084094A (ko) * | 2015-12-25 | 2018-07-24 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 |
| CN108475632A (zh) * | 2015-12-25 | 2018-08-31 | 东京毅力科创株式会社 | 基板处理方法 |
| TWI695428B (zh) * | 2015-12-25 | 2020-06-01 | 日商東京威力科創股份有限公司 | 基板處理方法 |
| US10910229B2 (en) | 2015-12-25 | 2021-02-02 | Tokyo Electron Limited | Substrate treatment method |
| CN108475632B (zh) * | 2015-12-25 | 2023-04-04 | 东京毅力科创株式会社 | 基板处理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS628512B2 (enExample) | 1987-02-23 |
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