JPS5650558A - Complementary mos integrated circuit - Google Patents
Complementary mos integrated circuitInfo
- Publication number
- JPS5650558A JPS5650558A JP12652179A JP12652179A JPS5650558A JP S5650558 A JPS5650558 A JP S5650558A JP 12652179 A JP12652179 A JP 12652179A JP 12652179 A JP12652179 A JP 12652179A JP S5650558 A JPS5650558 A JP S5650558A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- reduced
- type
- cmos
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12652179A JPS5650558A (en) | 1979-10-01 | 1979-10-01 | Complementary mos integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12652179A JPS5650558A (en) | 1979-10-01 | 1979-10-01 | Complementary mos integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5650558A true JPS5650558A (en) | 1981-05-07 |
JPS6253952B2 JPS6253952B2 (ko) | 1987-11-12 |
Family
ID=14937257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12652179A Granted JPS5650558A (en) | 1979-10-01 | 1979-10-01 | Complementary mos integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650558A (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61501736A (ja) * | 1984-03-29 | 1986-08-14 | ヒユ−ズ・エアクラフト・カンパニ− | Vlsi用ラッチ・アップ抵抗性cmos構造 |
US6780713B2 (en) | 2001-06-29 | 2004-08-24 | Atmel Germany Gmbh | Process for manufacturing a DMOS transistor |
US6806131B2 (en) | 2001-06-29 | 2004-10-19 | Atmel Germany Gmbh | Process for manufacturing a DMOS transistor |
US6878603B2 (en) | 2001-06-29 | 2005-04-12 | Atmel Germany Gmbh | Process for manufacturing a DMOS transistor |
US6933215B2 (en) | 2001-06-29 | 2005-08-23 | Atmel Germany Gmbh | Process for doping a semiconductor body |
US7064385B2 (en) | 2003-09-19 | 2006-06-20 | Atmel Germany Gmbh | DMOS-transistor with lateral dopant gradient in drift region and method of producing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50151080A (ko) * | 1974-05-23 | 1975-12-04 | ||
JPS53147469A (en) * | 1977-05-27 | 1978-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Vertical field effect transistor and production of the same |
-
1979
- 1979-10-01 JP JP12652179A patent/JPS5650558A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50151080A (ko) * | 1974-05-23 | 1975-12-04 | ||
JPS53147469A (en) * | 1977-05-27 | 1978-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Vertical field effect transistor and production of the same |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61501736A (ja) * | 1984-03-29 | 1986-08-14 | ヒユ−ズ・エアクラフト・カンパニ− | Vlsi用ラッチ・アップ抵抗性cmos構造 |
US6780713B2 (en) | 2001-06-29 | 2004-08-24 | Atmel Germany Gmbh | Process for manufacturing a DMOS transistor |
US6806131B2 (en) | 2001-06-29 | 2004-10-19 | Atmel Germany Gmbh | Process for manufacturing a DMOS transistor |
US6878603B2 (en) | 2001-06-29 | 2005-04-12 | Atmel Germany Gmbh | Process for manufacturing a DMOS transistor |
US6933215B2 (en) | 2001-06-29 | 2005-08-23 | Atmel Germany Gmbh | Process for doping a semiconductor body |
US7064385B2 (en) | 2003-09-19 | 2006-06-20 | Atmel Germany Gmbh | DMOS-transistor with lateral dopant gradient in drift region and method of producing the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6253952B2 (ko) | 1987-11-12 |
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