JPS5649526A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5649526A JPS5649526A JP12544179A JP12544179A JPS5649526A JP S5649526 A JPS5649526 A JP S5649526A JP 12544179 A JP12544179 A JP 12544179A JP 12544179 A JP12544179 A JP 12544179A JP S5649526 A JPS5649526 A JP S5649526A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor substrate
- soaked
- dissolved
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P95/00—
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12544179A JPS5649526A (en) | 1979-09-29 | 1979-09-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12544179A JPS5649526A (en) | 1979-09-29 | 1979-09-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649526A true JPS5649526A (en) | 1981-05-06 |
| JPS6327850B2 JPS6327850B2 (OSRAM) | 1988-06-06 |
Family
ID=14910158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12544179A Granted JPS5649526A (en) | 1979-09-29 | 1979-09-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5649526A (OSRAM) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768834A (en) * | 1980-10-17 | 1982-04-27 | Matsushita Electric Ind Co Ltd | Photographic etching method |
| JPS5844715A (ja) * | 1981-09-11 | 1983-03-15 | Fujitsu Ltd | 微細パタ−ン形成方法 |
| JPS59136935A (ja) * | 1983-01-27 | 1984-08-06 | Nec Corp | 半導体装置の製造方法 |
| KR20020006735A (ko) * | 2000-07-13 | 2002-01-26 | 이형도 | 미세 디바이스의 표면처리물질 및 표면처리방법 |
| US20100075262A1 (en) * | 2008-09-22 | 2010-03-25 | Robert Koefer | Post arrays and methods of making the same |
| US9244358B2 (en) | 2008-10-21 | 2016-01-26 | Tokyo Ohka Kogyo Co., Ltd. | Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5434769A (en) * | 1977-08-24 | 1979-03-14 | Fuji Electric Co Ltd | Photoetching method for silicon semiconductor wafer |
-
1979
- 1979-09-29 JP JP12544179A patent/JPS5649526A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5434769A (en) * | 1977-08-24 | 1979-03-14 | Fuji Electric Co Ltd | Photoetching method for silicon semiconductor wafer |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768834A (en) * | 1980-10-17 | 1982-04-27 | Matsushita Electric Ind Co Ltd | Photographic etching method |
| JPS5844715A (ja) * | 1981-09-11 | 1983-03-15 | Fujitsu Ltd | 微細パタ−ン形成方法 |
| JPS59136935A (ja) * | 1983-01-27 | 1984-08-06 | Nec Corp | 半導体装置の製造方法 |
| KR20020006735A (ko) * | 2000-07-13 | 2002-01-26 | 이형도 | 미세 디바이스의 표면처리물질 및 표면처리방법 |
| US20100075262A1 (en) * | 2008-09-22 | 2010-03-25 | Robert Koefer | Post arrays and methods of making the same |
| US8617799B2 (en) * | 2008-09-22 | 2013-12-31 | Api Technologies Corp. | Post arrays and methods of making the same |
| US9244358B2 (en) | 2008-10-21 | 2016-01-26 | Tokyo Ohka Kogyo Co., Ltd. | Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327850B2 (OSRAM) | 1988-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02291128A (ja) | 液体での処理後基板を乾燥する方法及びその装置 | |
| US3520683A (en) | Photoresist method and products produced thereby | |
| JPS5649526A (en) | Manufacture of semiconductor device | |
| DE2726813A1 (de) | Verfahren zur herstellung eines fotowiderstandes | |
| JPS55130839A (en) | Uniform etching method of article | |
| JPS52119172A (en) | Forming method of fine pattern | |
| JPS5633827A (en) | Photo etching method including surface treatment of substrate | |
| JPS5710231A (en) | Manufacture of semiconductor device | |
| JPS5248468A (en) | Process for production of semiconductor device | |
| JPS56138713A (en) | Orienting substrate for liquid crystal display and its manufacture | |
| JPS6137774B2 (OSRAM) | ||
| JPS62211643A (ja) | 密着強化剤塗布方法 | |
| DE2142174A1 (de) | Verfahren zur Herstellung von Halb leitervomchtungen | |
| JPS5740934A (en) | Manufacture of semiconductor element | |
| JPS56140345A (en) | Formation of pattern | |
| JPS5690539A (en) | Production of semiconductor device | |
| JPS5647571A (en) | Etching liquid for mo | |
| JPS5615042A (en) | Manufacture of semiconductor device | |
| JPS5633841A (en) | Manufacture of semiconductor device | |
| JPS5578531A (en) | Semiconductor substrate | |
| JPS5533035A (en) | Forming of resist pattern shaped like inverted truncated pyramid | |
| JPS57118641A (en) | Lifting-off method | |
| JPS56101745A (en) | Formation of microminiature electrode | |
| JPS55166928A (en) | Manufacture of semiconductor device | |
| JPS5785828A (en) | Etching of polyimide resin |