JPS5648131A - Ion implantation machine - Google Patents

Ion implantation machine

Info

Publication number
JPS5648131A
JPS5648131A JP12441579A JP12441579A JPS5648131A JP S5648131 A JPS5648131 A JP S5648131A JP 12441579 A JP12441579 A JP 12441579A JP 12441579 A JP12441579 A JP 12441579A JP S5648131 A JPS5648131 A JP S5648131A
Authority
JP
Japan
Prior art keywords
discs
beams
toothed wheel
ion
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12441579A
Other languages
Japanese (ja)
Inventor
Toshimichi Taya
Takeshi Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12441579A priority Critical patent/JPS5648131A/en
Publication of JPS5648131A publication Critical patent/JPS5648131A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To implant ions with high-accuracy in a predetermined position through one side of the holes of discs by arranging plural discs at the position overlapping with ion beams. CONSTITUTION:Mass separation is done for ion beams 4 by an electromanget 3. Specific ion species 4' only pass through a gap 6 and the specific ion species scan all the surfaces of wafers 7a by driving 28 the gap 6 for movement. Fine variations in an implantation angle are revised and deflected by an electromagnet 26. A flat toothed wheel 32 is provided at the tip of a pulse motor 30a shaft to rotate a toothed wheel 29 running on the external circumference of a pulse motor 30b shaft and discs 9a are rotated through a fitting plate 33a installed on the toothed wheel 29. Predetermined amounts of ions are implanted in the surfaces of plural wafers 7a by rotating the discs 9a at a constant speed and by scanning the beams 4 in a radius direction. Each disc 9a has a bigger hole than each wafer on the same circumference with each wafer to stop the hole at the passing position of the beams 4. In this composition, ion implantation will be performed with high-accuracy and productivity will be increased.
JP12441579A 1979-09-27 1979-09-27 Ion implantation machine Pending JPS5648131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12441579A JPS5648131A (en) 1979-09-27 1979-09-27 Ion implantation machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12441579A JPS5648131A (en) 1979-09-27 1979-09-27 Ion implantation machine

Publications (1)

Publication Number Publication Date
JPS5648131A true JPS5648131A (en) 1981-05-01

Family

ID=14884903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12441579A Pending JPS5648131A (en) 1979-09-27 1979-09-27 Ion implantation machine

Country Status (1)

Country Link
JP (1) JPS5648131A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970052144A (en) * 1995-12-26 1997-07-29 김주용 Helical beam ion implanter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970052144A (en) * 1995-12-26 1997-07-29 김주용 Helical beam ion implanter

Similar Documents

Publication Publication Date Title
US4794305A (en) Substrate support structure for ion implantation device
GB1490481A (en) Particle implantation
ATE42425T1 (en) ROTARY DRIVE FOR ONE PLATE.
JPS5648131A (en) Ion implantation machine
GB1280011A (en) Improvements in or relating to ion beam separators
US4839523A (en) Ion implantation apparatus for semiconductor manufacture
JPS53119671A (en) Ion implanting method
DE2822342C3 (en) Machine for processing workpieces with spherical surfaces with magnetizable grinding powder held between two magnets
JPS57138552A (en) Cutting edge replacing apparatus of cutting tool
JP2707080B2 (en) Ion implantation method and apparatus
JPS6454654A (en) Ion implanting device
JPS6455375A (en) Device for projecting ion beam
DE7342874U (en) Open-end spinning device
JPS5669826A (en) Ion injector
JPS6468942A (en) Mechanism for positioning semiconductor substrate
JPS5632722A (en) Ion implanting apparatus
SU1291050A1 (en) Working member for distributing loose materials
SU1071309A1 (en) Disintegrator rotor
JPS57134933A (en) Electrically charged beam lithographer
SU531433A1 (en) Method of alloying materials
JPS6482443A (en) Focused ion beam implanting apparatus
SU682350A1 (en) Device for assembly of fasteners
SU844216A1 (en) Apparatus for indexing cylindrical parts having flats near the end
SU514681A1 (en) Device for continuous grinding of spherical ends of tapered rollers
JPS6321088Y2 (en)