JPS6482443A - Focused ion beam implanting apparatus - Google Patents

Focused ion beam implanting apparatus

Info

Publication number
JPS6482443A
JPS6482443A JP24046587A JP24046587A JPS6482443A JP S6482443 A JPS6482443 A JP S6482443A JP 24046587 A JP24046587 A JP 24046587A JP 24046587 A JP24046587 A JP 24046587A JP S6482443 A JPS6482443 A JP S6482443A
Authority
JP
Japan
Prior art keywords
rotated
angle
gear
horizontal direction
deflectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24046587A
Other languages
Japanese (ja)
Other versions
JPH0616387B2 (en
Inventor
Hiroshi Sawaragi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP24046587A priority Critical patent/JPH0616387B2/en
Publication of JPS6482443A publication Critical patent/JPS6482443A/en
Publication of JPH0616387B2 publication Critical patent/JPH0616387B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate the channel effect and surely perform the ion implantation to a material by rotating obliquely illuminating deflectors in the horizontal direction and controlling the rotation angle. CONSTITUTION:A block 20 fixed with obliquely illuminating electrostatic type deflectors 13 and 14 can be rotated up to + or -90 deg. in the horizontal direction centering an axis 30. When a rotation control signal is fed to a motor 23 from an MPU 24 to rotate it by the quantity in response to the input signal, a gear 22 directly coupled with its rotary shaft is also rotated, and its rotating force is transferred to a gear 21 engaged with it. When the gear 21 is rotated, the block 20 is rotated in the horizontal direction by the preset angle in response to it, and as a result the deflectors 13 and 14 fixed on the inside of the block 20 are of course rotated by the same angle. This rotation angle can be set to an angle at which the collision probability of an ion beam Bi with atoms is the highest. Ions can be thereby implanted to a material while the channel effect is eliminated.
JP24046587A 1987-09-24 1987-09-24 Focused ion beam implanter Expired - Lifetime JPH0616387B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24046587A JPH0616387B2 (en) 1987-09-24 1987-09-24 Focused ion beam implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24046587A JPH0616387B2 (en) 1987-09-24 1987-09-24 Focused ion beam implanter

Publications (2)

Publication Number Publication Date
JPS6482443A true JPS6482443A (en) 1989-03-28
JPH0616387B2 JPH0616387B2 (en) 1994-03-02

Family

ID=17059911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24046587A Expired - Lifetime JPH0616387B2 (en) 1987-09-24 1987-09-24 Focused ion beam implanter

Country Status (1)

Country Link
JP (1) JPH0616387B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007111876A2 (en) * 2006-03-22 2007-10-04 Varian Semiconductor Equipment Associates, Inc. Determining ion beam parallelism using refraction method
JP2008021504A (en) * 2006-07-12 2008-01-31 Fujitsu Ltd Irradiation direction-variable ion irradiation device, and secondary ion mass spectrometer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007111876A2 (en) * 2006-03-22 2007-10-04 Varian Semiconductor Equipment Associates, Inc. Determining ion beam parallelism using refraction method
WO2007111876A3 (en) * 2006-03-22 2007-11-08 Varian Semiconductor Equipment Determining ion beam parallelism using refraction method
US7397049B2 (en) 2006-03-22 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Determining ion beam parallelism using refraction method
TWI404107B (en) * 2006-03-22 2013-08-01 Varian Semiconductor Equipment Determining ion beam parallelism using refraction method
JP2008021504A (en) * 2006-07-12 2008-01-31 Fujitsu Ltd Irradiation direction-variable ion irradiation device, and secondary ion mass spectrometer

Also Published As

Publication number Publication date
JPH0616387B2 (en) 1994-03-02

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