WO2007111876A3 - Determining ion beam parallelism using refraction method - Google Patents

Determining ion beam parallelism using refraction method Download PDF

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Publication number
WO2007111876A3
WO2007111876A3 PCT/US2007/006878 US2007006878W WO2007111876A3 WO 2007111876 A3 WO2007111876 A3 WO 2007111876A3 US 2007006878 W US2007006878 W US 2007006878W WO 2007111876 A3 WO2007111876 A3 WO 2007111876A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion beam
parallelism
determining
test position
acceleration
Prior art date
Application number
PCT/US2007/006878
Other languages
French (fr)
Other versions
WO2007111876A2 (en
Inventor
Raymond Callahan
David Olson
Wilhelm P Platow
Stanislav Todorov
Original Assignee
Varian Semiconductor Equipment
Raymond Callahan
David Olson
Wilhelm P Platow
Stanislav Todorov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment, Raymond Callahan, David Olson, Wilhelm P Platow, Stanislav Todorov filed Critical Varian Semiconductor Equipment
Publication of WO2007111876A2 publication Critical patent/WO2007111876A2/en
Publication of WO2007111876A3 publication Critical patent/WO2007111876A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24405—Faraday cages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2485—Electric or electronic means
    • H01J2237/2487—Electric or electronic means using digital signal processors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

Abstract

A system, method and program product for determining parallelism of an ion beam (4) using a refraction method, are disclosed. One embodiment includes determining a first test position (300) of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position (302) of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system (10) and adjustments of the ion implanter system based on the parallelism determination are also disclosed.
PCT/US2007/006878 2006-03-22 2007-03-20 Determining ion beam parallelism using refraction method WO2007111876A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/386,596 US7397049B2 (en) 2006-03-22 2006-03-22 Determining ion beam parallelism using refraction method
US11/386,596 2006-03-22

Publications (2)

Publication Number Publication Date
WO2007111876A2 WO2007111876A2 (en) 2007-10-04
WO2007111876A3 true WO2007111876A3 (en) 2007-11-08

Family

ID=38442076

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/006878 WO2007111876A2 (en) 2006-03-22 2007-03-20 Determining ion beam parallelism using refraction method

Country Status (3)

Country Link
US (1) US7397049B2 (en)
TW (1) TWI404107B (en)
WO (1) WO2007111876A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7397049B2 (en) * 2006-03-22 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Determining ion beam parallelism using refraction method
CN102201321B (en) * 2010-03-24 2013-04-10 上海凯世通半导体有限公司 Ion implantation system and method
JP6220749B2 (en) 2014-07-30 2017-10-25 株式会社日立ハイテクノロジーズ Ion gun, ion milling apparatus, and ion milling method
JP6294182B2 (en) * 2014-07-30 2018-03-14 株式会社日立ハイテクノロジーズ Ion gun, ion milling apparatus, and ion milling method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482443A (en) * 1987-09-24 1989-03-28 Jeol Ltd Focused ion beam implanting apparatus
EP0457321A2 (en) * 1990-05-17 1991-11-21 Nissin Electric Company, Limited Method and apparatus for measuring ion beam collimation, shaping the ion beam and controlling scanning thereof
EP1202320A2 (en) * 2000-10-27 2002-05-02 Hitachi, Ltd. Method and apparatus for charged particle beam microscopy
US20030183780A1 (en) * 2002-03-27 2003-10-02 Sumitomo Eaton Nova Corporation Ion beam charge neutralizer and method therefor
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US972504A (en) * 1908-03-23 1910-10-11 Walter F Brown Continuous-combustion heat-engine.
US2493073A (en) * 1945-08-14 1950-01-03 Kinneen William Patrick Method of vaporizing or gasifying liquids
US4635590A (en) * 1983-04-28 1987-01-13 Anthony Gerace Internal combustion engine and operating cycle therefor
KR970052183A (en) * 1995-12-30 1997-07-29 김주용 Ion implanter with adjustable ion beam angle
US6854437B1 (en) * 1997-10-16 2005-02-15 Jesus Vazquez Continuous flow expandable chamber and dynamic displacement rotary devices
DE19909689B4 (en) * 1999-03-05 2009-07-23 Rohs, Ulrich, Dr.-Ing. Piston engine with continuous combustion
US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
US6334300B1 (en) * 1999-10-08 2002-01-01 Jeffrey S. Melcher Engine having external combustion chamber
US6437350B1 (en) * 2000-08-28 2002-08-20 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting beam parallelism in ion implanters
WO2002058103A2 (en) 2001-01-17 2002-07-25 Varian Semiconductor Equipment Associates, Inc. In situ ion beam incidence angle and beam divergence monitor
KR100444201B1 (en) 2002-04-18 2004-08-16 삼성전자주식회사 Method and apparatus for measuring an angle of inclination of ion beam
TW558649B (en) * 2002-10-25 2003-10-21 Hon Hai Prec Ind Co Ltd Method and device for making 2D gradient refractive index optical components
US6828572B2 (en) 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
US20060169922A1 (en) * 2004-10-08 2006-08-03 Shengwu Chang Ion implant ion beam parallelism and direction integrity determination and adjusting
US7397049B2 (en) * 2006-03-22 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Determining ion beam parallelism using refraction method
DE112008003003A5 (en) * 2007-11-12 2010-08-05 Getas Gmbh Axial piston motor and method for operating an axial piston motor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482443A (en) * 1987-09-24 1989-03-28 Jeol Ltd Focused ion beam implanting apparatus
EP0457321A2 (en) * 1990-05-17 1991-11-21 Nissin Electric Company, Limited Method and apparatus for measuring ion beam collimation, shaping the ion beam and controlling scanning thereof
EP1202320A2 (en) * 2000-10-27 2002-05-02 Hitachi, Ltd. Method and apparatus for charged particle beam microscopy
US20030183780A1 (en) * 2002-03-27 2003-10-02 Sumitomo Eaton Nova Corporation Ion beam charge neutralizer and method therefor
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity

Also Published As

Publication number Publication date
TWI404107B (en) 2013-08-01
TW200746218A (en) 2007-12-16
US20070221871A1 (en) 2007-09-27
US7397049B2 (en) 2008-07-08
WO2007111876A2 (en) 2007-10-04

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