KR970052144A - Helical beam ion implanter - Google Patents

Abstract

The present invention relates to a helical beam ion implanter capable of reducing the physical damage at the wafer interface by creating a spirally rotating ion beam and improving the repulsion and dispersion of ions due to the unidirectional direction of the ion beam. The present invention provides a source that decomposes gas injected from an external gas box into a plasma state, an ion analyzer that analyzes only necessary ions among various atoms in the decomposed plasma state, and accelerates the analyzed ions with energy required for injection. An acceleration tube, a scanner for scanning the accelerated ions to be uniformly injected into the entire surface of the wafer, and an end station for supporting the wafer, which is a workpiece, and an electric field and a magnetic field applied to the accelerated ion beam at the rear end of the acceleration tube. And an E × B rotation vector device that generates an abducted ion beam having a spiral motion direction by applying it as a vertical vector. According to the helical beam ion implanter of the present invention, the ion particles accelerated toward the wafer have a helical direction of motion, thereby reducing physical damage at the wafer interface. In other words, the formation of the normal angle on the wafer surface by the rotating ion beam can reduce the physical repulsion during ion implantation, and the channeling phenomenon generated when the conventional unidirectional ion beam is implanted by the rotating motion of the ion particles can be reduced. In addition, the effect of soft landing ion implantation can be expected due to the weakening of penetration at the interface.

Description

Helical beam ion implanter

As this is a public information case, the full text was not included.

4 is a schematic structural diagram of a helical beam ion implanter according to the present invention,

5 and 6 are diagrams for explaining the physical phenomenon of the ion beam in the helical beam ion implanter according to the present invention, (a) (b) (c) of Figure 5 is the generation of the helical ion beam Principle diagram,

6 is an enlarged side cross-sectional view showing a wafer implantation state of a helical ion beam.

Claims (1)

A source for decomposing gas injected from an external gas box into a plasma state, an ion analyzer for analyzing only necessary ions among various atoms in the decomposed plasma state, an acceleration tube for accelerating the analyzed ions with energy required for injection, A scanner for scanning the accelerated ions to be uniformly injected into the entire surface of the wafer, and an end station for supporting the wafer to be processed, and the electric field and the magnetic field to the accelerated ion beam at the rear end of the acceleration tube by applying a vertical vector A helical beam ion implanter comprising an E × B rotation vector device for generating a rotating ion beam having a spiral direction of motion. ※ Note: The disclosure is based on the initial application.