JPS564280A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS564280A
JPS564280A JP8003579A JP8003579A JPS564280A JP S564280 A JPS564280 A JP S564280A JP 8003579 A JP8003579 A JP 8003579A JP 8003579 A JP8003579 A JP 8003579A JP S564280 A JPS564280 A JP S564280A
Authority
JP
Japan
Prior art keywords
region
type
effect transistor
field effect
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8003579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS621265B2 (enExample
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8003579A priority Critical patent/JPS564280A/ja
Publication of JPS564280A publication Critical patent/JPS564280A/ja
Publication of JPS621265B2 publication Critical patent/JPS621265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Element Separation (AREA)
JP8003579A 1979-06-25 1979-06-25 Insulated gate type field effect transistor Granted JPS564280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8003579A JPS564280A (en) 1979-06-25 1979-06-25 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8003579A JPS564280A (en) 1979-06-25 1979-06-25 Insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS564280A true JPS564280A (en) 1981-01-17
JPS621265B2 JPS621265B2 (enExample) 1987-01-12

Family

ID=13706997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8003579A Granted JPS564280A (en) 1979-06-25 1979-06-25 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS564280A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571258A (en) * 1980-06-02 1982-01-06 Matsushita Electronics Corp Insulated gate semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571258A (en) * 1980-06-02 1982-01-06 Matsushita Electronics Corp Insulated gate semiconductor device

Also Published As

Publication number Publication date
JPS621265B2 (enExample) 1987-01-12

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