JPS5642385A - Hetero-structure semiconductor device - Google Patents

Hetero-structure semiconductor device

Info

Publication number
JPS5642385A
JPS5642385A JP11689579A JP11689579A JPS5642385A JP S5642385 A JPS5642385 A JP S5642385A JP 11689579 A JP11689579 A JP 11689579A JP 11689579 A JP11689579 A JP 11689579A JP S5642385 A JPS5642385 A JP S5642385A
Authority
JP
Japan
Prior art keywords
region
layer
type
conductivity type
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11689579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244709B2 (enrdf_load_stackoverflow
Inventor
Yoshinari Matsumoto
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11689579A priority Critical patent/JPS5642385A/ja
Publication of JPS5642385A publication Critical patent/JPS5642385A/ja
Publication of JPS6244709B2 publication Critical patent/JPS6244709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP11689579A 1979-09-12 1979-09-12 Hetero-structure semiconductor device Granted JPS5642385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11689579A JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11689579A JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642385A true JPS5642385A (en) 1981-04-20
JPS6244709B2 JPS6244709B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=14698287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11689579A Granted JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642385A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198667A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPS5830164A (ja) * 1981-08-17 1983-02-22 Nippon Telegr & Teleph Corp <Ntt> アバランシフオトダイオ−ド及びその製法
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法
JPS5856364A (ja) * 1981-09-08 1983-04-04 ア−・エヌ・テ−・ナッハリヒテンテヒニ−ク・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング モノリシツクとして構成された光受信器の入力段
JPS5892283A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 半導体受光素子の製造方法
JPS60198786A (ja) * 1984-03-22 1985-10-08 Nec Corp 半導体受光素子
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector
JPH06281783A (ja) * 1993-06-29 1994-10-07 Babcock Hitachi Kk 沸騰水形原子炉圧力容器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01150107U (enrdf_load_stackoverflow) * 1988-04-04 1989-10-17

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198667A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPS5830164A (ja) * 1981-08-17 1983-02-22 Nippon Telegr & Teleph Corp <Ntt> アバランシフオトダイオ−ド及びその製法
JPS5856364A (ja) * 1981-09-08 1983-04-04 ア−・エヌ・テ−・ナッハリヒテンテヒニ−ク・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング モノリシツクとして構成された光受信器の入力段
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法
US4761383A (en) * 1981-09-28 1988-08-02 Kokusai Denshin Denwa Kabushiki Kaisha Method of manufacturing avalanche photo diode
JPS5892283A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 半導体受光素子の製造方法
JPS60198786A (ja) * 1984-03-22 1985-10-08 Nec Corp 半導体受光素子
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector
JPH06281783A (ja) * 1993-06-29 1994-10-07 Babcock Hitachi Kk 沸騰水形原子炉圧力容器

Also Published As

Publication number Publication date
JPS6244709B2 (enrdf_load_stackoverflow) 1987-09-22

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