JPS5642381A - Variable capacity diode device - Google Patents
Variable capacity diode deviceInfo
- Publication number
- JPS5642381A JPS5642381A JP11860579A JP11860579A JPS5642381A JP S5642381 A JPS5642381 A JP S5642381A JP 11860579 A JP11860579 A JP 11860579A JP 11860579 A JP11860579 A JP 11860579A JP S5642381 A JPS5642381 A JP S5642381A
- Authority
- JP
- Japan
- Prior art keywords
- diffused
- regions
- layers
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11860579A JPS5642381A (en) | 1979-09-14 | 1979-09-14 | Variable capacity diode device |
DE19803034287 DE3034287A1 (de) | 1979-09-14 | 1980-09-11 | Varactordioden-anordnung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11860579A JPS5642381A (en) | 1979-09-14 | 1979-09-14 | Variable capacity diode device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5642381A true JPS5642381A (en) | 1981-04-20 |
Family
ID=14740694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11860579A Pending JPS5642381A (en) | 1979-09-14 | 1979-09-14 | Variable capacity diode device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5642381A (ja) |
DE (1) | DE3034287A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS606256U (ja) * | 1983-06-27 | 1985-01-17 | 東光株式会社 | Am受信機に用いられる可変容量ダイオ−ド |
US6995068B1 (en) * | 2000-06-09 | 2006-02-07 | Newport Fab, Llc | Double-implant high performance varactor and method for manufacturing same |
US7253073B2 (en) * | 2004-01-23 | 2007-08-07 | International Business Machines Corporation | Structure and method for hyper-abrupt junction varactors |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS526476A (en) * | 1975-07-07 | 1977-01-18 | Toshiba Corp | Semiconductor device |
JPS5218667B2 (ja) * | 1971-11-19 | 1977-05-23 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1614581A1 (de) * | 1967-08-14 | 1970-10-29 | Siemens Ag | Elektronisch steuerbare Kapazitaetsanordnung |
-
1979
- 1979-09-14 JP JP11860579A patent/JPS5642381A/ja active Pending
-
1980
- 1980-09-11 DE DE19803034287 patent/DE3034287A1/de not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5218667B2 (ja) * | 1971-11-19 | 1977-05-23 | ||
JPS526476A (en) * | 1975-07-07 | 1977-01-18 | Toshiba Corp | Semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS606256U (ja) * | 1983-06-27 | 1985-01-17 | 東光株式会社 | Am受信機に用いられる可変容量ダイオ−ド |
US6995068B1 (en) * | 2000-06-09 | 2006-02-07 | Newport Fab, Llc | Double-implant high performance varactor and method for manufacturing same |
US7253073B2 (en) * | 2004-01-23 | 2007-08-07 | International Business Machines Corporation | Structure and method for hyper-abrupt junction varactors |
US7700453B2 (en) | 2004-01-23 | 2010-04-20 | International Business Machines Corporation | Method for forming hyper-abrupt junction varactors |
Also Published As
Publication number | Publication date |
---|---|
DE3034287A1 (de) | 1981-04-16 |
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