JPS5642378A - Manufacture of field effect semiconductor device - Google Patents

Manufacture of field effect semiconductor device

Info

Publication number
JPS5642378A
JPS5642378A JP11826079A JP11826079A JPS5642378A JP S5642378 A JPS5642378 A JP S5642378A JP 11826079 A JP11826079 A JP 11826079A JP 11826079 A JP11826079 A JP 11826079A JP S5642378 A JPS5642378 A JP S5642378A
Authority
JP
Japan
Prior art keywords
layer
gate electrode
substrate
forming
al2o3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11826079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6154264B2 (enExample
Inventor
Koichiro Kotani
Hidetake Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11826079A priority Critical patent/JPS5642378A/ja
Publication of JPS5642378A publication Critical patent/JPS5642378A/ja
Publication of JPS6154264B2 publication Critical patent/JPS6154264B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11826079A 1979-09-14 1979-09-14 Manufacture of field effect semiconductor device Granted JPS5642378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11826079A JPS5642378A (en) 1979-09-14 1979-09-14 Manufacture of field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11826079A JPS5642378A (en) 1979-09-14 1979-09-14 Manufacture of field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642378A true JPS5642378A (en) 1981-04-20
JPS6154264B2 JPS6154264B2 (enExample) 1986-11-21

Family

ID=14732214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11826079A Granted JPS5642378A (en) 1979-09-14 1979-09-14 Manufacture of field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642378A (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844058A (enExample) * 1971-10-08 1973-06-25
JPS5012984A (enExample) * 1973-06-01 1975-02-10
JPS5194775A (enExample) * 1975-02-19 1976-08-19
JPS51115780A (en) * 1974-10-31 1976-10-12 Matsushita Electric Ind Co Ltd Hetero junction gate form fieid effect transistor and manufacturing me thod

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844058A (enExample) * 1971-10-08 1973-06-25
JPS5012984A (enExample) * 1973-06-01 1975-02-10
JPS51115780A (en) * 1974-10-31 1976-10-12 Matsushita Electric Ind Co Ltd Hetero junction gate form fieid effect transistor and manufacturing me thod
JPS5194775A (enExample) * 1975-02-19 1976-08-19

Also Published As

Publication number Publication date
JPS6154264B2 (enExample) 1986-11-21

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