JPS5640293A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5640293A
JPS5640293A JP11647579A JP11647579A JPS5640293A JP S5640293 A JPS5640293 A JP S5640293A JP 11647579 A JP11647579 A JP 11647579A JP 11647579 A JP11647579 A JP 11647579A JP S5640293 A JPS5640293 A JP S5640293A
Authority
JP
Japan
Prior art keywords
type
substrate
layer
grown
varied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11647579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS625354B2 (enrdf_load_stackoverflow
Inventor
Yuichi Ide
Yoshinari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11647579A priority Critical patent/JPS5640293A/ja
Publication of JPS5640293A publication Critical patent/JPS5640293A/ja
Publication of JPS625354B2 publication Critical patent/JPS625354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)
JP11647579A 1979-09-11 1979-09-11 Semiconductor laser Granted JPS5640293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11647579A JPS5640293A (en) 1979-09-11 1979-09-11 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11647579A JPS5640293A (en) 1979-09-11 1979-09-11 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5640293A true JPS5640293A (en) 1981-04-16
JPS625354B2 JPS625354B2 (enrdf_load_stackoverflow) 1987-02-04

Family

ID=14688015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11647579A Granted JPS5640293A (en) 1979-09-11 1979-09-11 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5640293A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987888A (ja) * 1982-11-10 1984-05-21 Sharp Corp 半導体レ−ザ素子
JPS61135184A (ja) * 1984-12-05 1986-06-23 Sharp Corp 半導体レ−ザ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987888A (ja) * 1982-11-10 1984-05-21 Sharp Corp 半導体レ−ザ素子
JPS61135184A (ja) * 1984-12-05 1986-06-23 Sharp Corp 半導体レ−ザ装置

Also Published As

Publication number Publication date
JPS625354B2 (enrdf_load_stackoverflow) 1987-02-04

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