JPS5640248A - Treatment of semiconductor compound - Google Patents

Treatment of semiconductor compound

Info

Publication number
JPS5640248A
JPS5640248A JP11526779A JP11526779A JPS5640248A JP S5640248 A JPS5640248 A JP S5640248A JP 11526779 A JP11526779 A JP 11526779A JP 11526779 A JP11526779 A JP 11526779A JP S5640248 A JPS5640248 A JP S5640248A
Authority
JP
Japan
Prior art keywords
component
hno3
dissolution
dissolved
volume ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11526779A
Other languages
Japanese (ja)
Inventor
Yoshiaki Okajima
Susumu Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11526779A priority Critical patent/JPS5640248A/en
Publication of JPS5640248A publication Critical patent/JPS5640248A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To control the dissolution of an electrode metal at the time of semiconductor photoetching by adjusting the component ratio of fluoric acid-nitric acid-phosphoric acid to locate in the limits surrounding by four predetermined component dots in a volume ratio. CONSTITUTION:Si is dissolved and the dissolution of an Mo electrode will be controlled at normal temperature in a short period by adding H3PO4 to HF-HNO3. Furthermore, the yield of the dielectric strength of an element will remarkably be improved. At this time, Si and Mo will be dissolved at almost same speed by selecting HF:HNO3:HP4 (in volume ratio) in the limits surrounding by four component dots of 20:40:20, 20:30:50, 30:30:40 and 30:20:50. After that, etchants are removed by washing by water. The above method will also be applied to a semiconductor component consisting of Si and Cu or Ag.
JP11526779A 1979-09-10 1979-09-10 Treatment of semiconductor compound Pending JPS5640248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11526779A JPS5640248A (en) 1979-09-10 1979-09-10 Treatment of semiconductor compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11526779A JPS5640248A (en) 1979-09-10 1979-09-10 Treatment of semiconductor compound

Publications (1)

Publication Number Publication Date
JPS5640248A true JPS5640248A (en) 1981-04-16

Family

ID=14658432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11526779A Pending JPS5640248A (en) 1979-09-10 1979-09-10 Treatment of semiconductor compound

Country Status (1)

Country Link
JP (1) JPS5640248A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0590876A2 (en) * 1992-09-30 1994-04-06 AT&T Corp. Selective wet etching of silicon and silicon compounds

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0590876A2 (en) * 1992-09-30 1994-04-06 AT&T Corp. Selective wet etching of silicon and silicon compounds
EP0590876A3 (en) * 1992-09-30 1995-01-18 American Telephone & Telegraph Selective wet etching of silicon and silicon compounds.

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