JPS5640248A - Treatment of semiconductor compound - Google Patents
Treatment of semiconductor compoundInfo
- Publication number
- JPS5640248A JPS5640248A JP11526779A JP11526779A JPS5640248A JP S5640248 A JPS5640248 A JP S5640248A JP 11526779 A JP11526779 A JP 11526779A JP 11526779 A JP11526779 A JP 11526779A JP S5640248 A JPS5640248 A JP S5640248A
- Authority
- JP
- Japan
- Prior art keywords
- component
- hno3
- dissolution
- dissolved
- volume ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 150000001875 compounds Chemical class 0.000 title 1
- 238000004090 dissolution Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 229910004077 HF-HNO3 Inorganic materials 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 235000011007 phosphoric acid Nutrition 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To control the dissolution of an electrode metal at the time of semiconductor photoetching by adjusting the component ratio of fluoric acid-nitric acid-phosphoric acid to locate in the limits surrounding by four predetermined component dots in a volume ratio. CONSTITUTION:Si is dissolved and the dissolution of an Mo electrode will be controlled at normal temperature in a short period by adding H3PO4 to HF-HNO3. Furthermore, the yield of the dielectric strength of an element will remarkably be improved. At this time, Si and Mo will be dissolved at almost same speed by selecting HF:HNO3:HP4 (in volume ratio) in the limits surrounding by four component dots of 20:40:20, 20:30:50, 30:30:40 and 30:20:50. After that, etchants are removed by washing by water. The above method will also be applied to a semiconductor component consisting of Si and Cu or Ag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11526779A JPS5640248A (en) | 1979-09-10 | 1979-09-10 | Treatment of semiconductor compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11526779A JPS5640248A (en) | 1979-09-10 | 1979-09-10 | Treatment of semiconductor compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5640248A true JPS5640248A (en) | 1981-04-16 |
Family
ID=14658432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11526779A Pending JPS5640248A (en) | 1979-09-10 | 1979-09-10 | Treatment of semiconductor compound |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5640248A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0590876A2 (en) * | 1992-09-30 | 1994-04-06 | AT&T Corp. | Selective wet etching of silicon and silicon compounds |
-
1979
- 1979-09-10 JP JP11526779A patent/JPS5640248A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0590876A2 (en) * | 1992-09-30 | 1994-04-06 | AT&T Corp. | Selective wet etching of silicon and silicon compounds |
| EP0590876A3 (en) * | 1992-09-30 | 1995-01-18 | American Telephone & Telegraph | Selective wet etching of silicon and silicon compounds. |
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