JPS5640247A - Treatment of semicondutor compound - Google Patents

Treatment of semicondutor compound

Info

Publication number
JPS5640247A
JPS5640247A JP11526679A JP11526679A JPS5640247A JP S5640247 A JPS5640247 A JP S5640247A JP 11526679 A JP11526679 A JP 11526679A JP 11526679 A JP11526679 A JP 11526679A JP S5640247 A JPS5640247 A JP S5640247A
Authority
JP
Japan
Prior art keywords
hno3
h3bo3
etchants
added
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11526679A
Other languages
Japanese (ja)
Inventor
Susumu Koyama
Yoshiaki Okajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11526679A priority Critical patent/JPS5640247A/en
Publication of JPS5640247A publication Critical patent/JPS5640247A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To effectively dissolve a semiconductor while controlling the solution of a metallic section such as an electrode by treating a semiconductor compound in a short period by using etchants with normal temperature which added H3BO3 to HF, HNO3. CONSTITUTION:HF-HNO3 are mixed in the ranges of 55-70% by capacity to 45-30% by capacity and H3BO3 of 160-260g/l is added to the HF-HNO3. With a semiconductor device having an Mo electrode to an Si element etched by using the etchants added H3BO3 to HF-HNO3, Si is slightly dissolved by the treatment in a short period and at normal temperature and the solution of the Mo is controlled to about 1/10 and an element having good characteristics will be obtained with a good yield. The etchants will be removed by washing by water.
JP11526679A 1979-09-10 1979-09-10 Treatment of semicondutor compound Pending JPS5640247A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11526679A JPS5640247A (en) 1979-09-10 1979-09-10 Treatment of semicondutor compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11526679A JPS5640247A (en) 1979-09-10 1979-09-10 Treatment of semicondutor compound

Publications (1)

Publication Number Publication Date
JPS5640247A true JPS5640247A (en) 1981-04-16

Family

ID=14658406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11526679A Pending JPS5640247A (en) 1979-09-10 1979-09-10 Treatment of semicondutor compound

Country Status (1)

Country Link
JP (1) JPS5640247A (en)

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