JPS5640247A - Treatment of semicondutor compound - Google Patents
Treatment of semicondutor compoundInfo
- Publication number
- JPS5640247A JPS5640247A JP11526679A JP11526679A JPS5640247A JP S5640247 A JPS5640247 A JP S5640247A JP 11526679 A JP11526679 A JP 11526679A JP 11526679 A JP11526679 A JP 11526679A JP S5640247 A JPS5640247 A JP S5640247A
- Authority
- JP
- Japan
- Prior art keywords
- hno3
- h3bo3
- etchants
- added
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 229910004077 HF-HNO3 Inorganic materials 0.000 abstract 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To effectively dissolve a semiconductor while controlling the solution of a metallic section such as an electrode by treating a semiconductor compound in a short period by using etchants with normal temperature which added H3BO3 to HF, HNO3. CONSTITUTION:HF-HNO3 are mixed in the ranges of 55-70% by capacity to 45-30% by capacity and H3BO3 of 160-260g/l is added to the HF-HNO3. With a semiconductor device having an Mo electrode to an Si element etched by using the etchants added H3BO3 to HF-HNO3, Si is slightly dissolved by the treatment in a short period and at normal temperature and the solution of the Mo is controlled to about 1/10 and an element having good characteristics will be obtained with a good yield. The etchants will be removed by washing by water.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11526679A JPS5640247A (en) | 1979-09-10 | 1979-09-10 | Treatment of semicondutor compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11526679A JPS5640247A (en) | 1979-09-10 | 1979-09-10 | Treatment of semicondutor compound |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5640247A true JPS5640247A (en) | 1981-04-16 |
Family
ID=14658406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11526679A Pending JPS5640247A (en) | 1979-09-10 | 1979-09-10 | Treatment of semicondutor compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5640247A (en) |
-
1979
- 1979-09-10 JP JP11526679A patent/JPS5640247A/en active Pending
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