JPS558085A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS558085A
JPS558085A JP8131578A JP8131578A JPS558085A JP S558085 A JPS558085 A JP S558085A JP 8131578 A JP8131578 A JP 8131578A JP 8131578 A JP8131578 A JP 8131578A JP S558085 A JPS558085 A JP S558085A
Authority
JP
Japan
Prior art keywords
tool
wire
electrode
bond section
bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8131578A
Other languages
Japanese (ja)
Inventor
Kenichi Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8131578A priority Critical patent/JPS558085A/en
Publication of JPS558085A publication Critical patent/JPS558085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To make a loose wire straight at the second bond section by moving a tool beyond the second bond section and reversing it when moving the bonding tool into the second bond section.
CONSTITUTION: A wire 3 is through the bonding tool 1 and the wire 3 is pressurized and attached to the external electrode 4 at the point of the tool 1. Then, while the wire 3 is drawn out from a through-hole the tool 1 is moved on a semiconductor 6, when the tool 1 is moved beyond the electrode 7 at the second bond and the tool 1 is reversed into the electrode 7 at course 8. The wire 3 drown out too much from the through-hole 2 is staighten up at the second bond section with the bending power obtained when the tool 1 moved back to the electrode 7. As a result, the insulating space between the wire 3 and the semiconductor chip at the second bond section is maintained to make it very difficult to short.
COPYRIGHT: (C)1980,JPO&Japio
JP8131578A 1978-07-03 1978-07-03 Wire bonding method Pending JPS558085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8131578A JPS558085A (en) 1978-07-03 1978-07-03 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8131578A JPS558085A (en) 1978-07-03 1978-07-03 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS558085A true JPS558085A (en) 1980-01-21

Family

ID=13742951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8131578A Pending JPS558085A (en) 1978-07-03 1978-07-03 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS558085A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010737A (en) * 1983-06-30 1985-01-19 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS62108533A (en) * 1985-11-06 1987-05-19 Matsushita Electric Ind Co Ltd Wire bonding method
JP2018121000A (en) * 2017-01-27 2018-08-02 日亜化学工業株式会社 Method for manufacturing light-emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010737A (en) * 1983-06-30 1985-01-19 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS62108533A (en) * 1985-11-06 1987-05-19 Matsushita Electric Ind Co Ltd Wire bonding method
JP2018121000A (en) * 2017-01-27 2018-08-02 日亜化学工業株式会社 Method for manufacturing light-emitting device
US10181452B2 (en) 2017-01-27 2019-01-15 Nichia Corporation Method for manufacturing light-emitting device

Similar Documents

Publication Publication Date Title
JPS558085A (en) Wire bonding method
JPS5434678A (en) Semiconductor device
JPS5348461A (en) Wire bonder
JPS51126063A (en) Wire bonding method
JPS5422768A (en) Semiconductor device
JPS5419652A (en) Lead bonding method
JPS52142485A (en) Wire bonding device
JPS51151069A (en) Electrode forming method of a semiconductor element
JPS52129280A (en) Wire bonding method
JPS5279659A (en) Semiconductor device
JPS5416979A (en) Production of semiconuctor device
JPS5279657A (en) Wire bonding device
JPS52143186A (en) Taping device
JPS53136961A (en) Internal-matched high frequency semiconductor device
JPS524084A (en) Cord end molding method
JPS547865A (en) Semiconductor device
JPS5418289A (en) Manufacture of semiconductor device with radiator
JPS5370766A (en) Semiconductor device
JPS52126787A (en) Connecting method of lead wire
JPS5396670A (en) Pellet bonding method
JPS5361970A (en) Semiconductor element
JPS5317274A (en) Electrode structure of semiconductor element
JPS52113158A (en) Connection of semiconductor leads
JPS5370671A (en) Production of semiconductor device
JPS53129968A (en) Ceramic package type semiconductor device and production of the same