JPS5633844A - Semiconductor device and manufacture therefor - Google Patents
Semiconductor device and manufacture thereforInfo
- Publication number
- JPS5633844A JPS5633844A JP10995879A JP10995879A JPS5633844A JP S5633844 A JPS5633844 A JP S5633844A JP 10995879 A JP10995879 A JP 10995879A JP 10995879 A JP10995879 A JP 10995879A JP S5633844 A JPS5633844 A JP S5633844A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- vapor growth
- semiconductor device
- dampproofness
- 9mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 235000013399 edible fruits Nutrition 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10995879A JPS5633844A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device and manufacture therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10995879A JPS5633844A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device and manufacture therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5633844A true JPS5633844A (en) | 1981-04-04 |
| JPS6344293B2 JPS6344293B2 (enrdf_load_stackoverflow) | 1988-09-05 |
Family
ID=14523440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10995879A Granted JPS5633844A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device and manufacture therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5633844A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119611A (ja) * | 1982-01-07 | 1983-07-16 | Mitsubishi Electric Corp | 超電導コイル |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5214367A (en) * | 1975-07-25 | 1977-02-03 | Hitachi Ltd | Semiconductor device on which the phosphosilicate glass layer is formed |
| JPS52131484A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Semiconductor device |
| JPS5460558A (en) * | 1977-10-24 | 1979-05-16 | Hitachi Ltd | Electrode forming method |
-
1979
- 1979-08-28 JP JP10995879A patent/JPS5633844A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5214367A (en) * | 1975-07-25 | 1977-02-03 | Hitachi Ltd | Semiconductor device on which the phosphosilicate glass layer is formed |
| JPS52131484A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Semiconductor device |
| JPS5460558A (en) * | 1977-10-24 | 1979-05-16 | Hitachi Ltd | Electrode forming method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119611A (ja) * | 1982-01-07 | 1983-07-16 | Mitsubishi Electric Corp | 超電導コイル |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6344293B2 (enrdf_load_stackoverflow) | 1988-09-05 |
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