JPS5630750A - Bipolar transistor and manufacture thereof - Google Patents

Bipolar transistor and manufacture thereof

Info

Publication number
JPS5630750A
JPS5630750A JP10624779A JP10624779A JPS5630750A JP S5630750 A JPS5630750 A JP S5630750A JP 10624779 A JP10624779 A JP 10624779A JP 10624779 A JP10624779 A JP 10624779A JP S5630750 A JPS5630750 A JP S5630750A
Authority
JP
Japan
Prior art keywords
layer
type
base layer
shallow
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10624779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6360550B2 (enrdf_load_stackoverflow
Inventor
Masao Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10624779A priority Critical patent/JPS5630750A/ja
Publication of JPS5630750A publication Critical patent/JPS5630750A/ja
Publication of JPS6360550B2 publication Critical patent/JPS6360550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP10624779A 1979-08-21 1979-08-21 Bipolar transistor and manufacture thereof Granted JPS5630750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10624779A JPS5630750A (en) 1979-08-21 1979-08-21 Bipolar transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10624779A JPS5630750A (en) 1979-08-21 1979-08-21 Bipolar transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5630750A true JPS5630750A (en) 1981-03-27
JPS6360550B2 JPS6360550B2 (enrdf_load_stackoverflow) 1988-11-24

Family

ID=14428770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10624779A Granted JPS5630750A (en) 1979-08-21 1979-08-21 Bipolar transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5630750A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195968A (ja) * 1984-03-19 1985-10-04 Hitachi Ltd 半導体装置
US4695862A (en) * 1984-09-20 1987-09-22 Sony Corporation Semiconductor apparatus
JPS63289861A (ja) * 1987-05-21 1988-11-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH02148848A (ja) * 1988-11-30 1990-06-07 Nec Corp 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08323693A (ja) * 1995-05-25 1996-12-10 Mitsubishi Cable Ind Ltd 軟質管体の切断台

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3083441A (en) * 1959-04-13 1963-04-02 Texas Instruments Inc Method for fabricating transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3083441A (en) * 1959-04-13 1963-04-02 Texas Instruments Inc Method for fabricating transistors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195968A (ja) * 1984-03-19 1985-10-04 Hitachi Ltd 半導体装置
US4695862A (en) * 1984-09-20 1987-09-22 Sony Corporation Semiconductor apparatus
JPS63289861A (ja) * 1987-05-21 1988-11-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH02148848A (ja) * 1988-11-30 1990-06-07 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6360550B2 (enrdf_load_stackoverflow) 1988-11-24

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