JPS561568A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS561568A JPS561568A JP7735279A JP7735279A JPS561568A JP S561568 A JPS561568 A JP S561568A JP 7735279 A JP7735279 A JP 7735279A JP 7735279 A JP7735279 A JP 7735279A JP S561568 A JPS561568 A JP S561568A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- type
- opening
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To provide a bipolar transistor having high density and preferable high frequency characteristics by forming an emitter region and a graft base region in self-alignment. CONSTITUTION:An oxide film 22 is coated on an N-type Si substrate 21, an opening 22a is perforated thereat, P-type impurity ion is implanted thereon, it is heat treated to form a P-type base region 13 in the substrate 21. Then, a BSG film 24 and an aluminum film 25 becoming a mask for ion implantation are laminated on the entire surface of the substrate 21 including the region 13, an opening 24a is again perforated thereat, N-type impurity ion is implanted therethrough to form a region 25 becoming an emitter thereafter in the region 13. Thereafter, the end surface of the film 4 exposed in the opening 24a is etched with a mixture solution containing hydrofluoric acid and ammonium fluoride to obtain an opening 24a' laterally expanded, the film 25 is removed, and an SiO2 film 27 is coated on the entire surface. Then, it is heat treated to form the region 26 into an N-type emitter region 26a, and the impurity in the film 24 is simultaneously diffused to alter the region 13 into P<->-type graft base region 23a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7735279A JPS561568A (en) | 1979-06-19 | 1979-06-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7735279A JPS561568A (en) | 1979-06-19 | 1979-06-19 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS561568A true JPS561568A (en) | 1981-01-09 |
Family
ID=13631510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7735279A Pending JPS561568A (en) | 1979-06-19 | 1979-06-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561568A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846673A (en) * | 1981-09-11 | 1983-03-18 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
| JPS5846674A (en) * | 1981-09-11 | 1983-03-18 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
| JPH01118319U (en) * | 1988-01-29 | 1989-08-10 | ||
| EP0718891B1 (en) * | 1994-12-22 | 2002-06-12 | Motorola, Inc. | High performance, high voltage non-epi bipolar transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50104872A (en) * | 1974-01-17 | 1975-08-19 | ||
| JPS52141573A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1979
- 1979-06-19 JP JP7735279A patent/JPS561568A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50104872A (en) * | 1974-01-17 | 1975-08-19 | ||
| JPS52141573A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846673A (en) * | 1981-09-11 | 1983-03-18 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
| JPS5846674A (en) * | 1981-09-11 | 1983-03-18 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
| JPH01118319U (en) * | 1988-01-29 | 1989-08-10 | ||
| EP0718891B1 (en) * | 1994-12-22 | 2002-06-12 | Motorola, Inc. | High performance, high voltage non-epi bipolar transistor |
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