JPS562667A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS562667A
JPS562667A JP7683479A JP7683479A JPS562667A JP S562667 A JPS562667 A JP S562667A JP 7683479 A JP7683479 A JP 7683479A JP 7683479 A JP7683479 A JP 7683479A JP S562667 A JPS562667 A JP S562667A
Authority
JP
Japan
Prior art keywords
region
type
gate
cathode
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7683479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6145395B2 (enrdf_load_stackoverflow
Inventor
Susumu Murakami
Yoshio Terasawa
Saburo Oikawa
Tsutomu Yao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7683479A priority Critical patent/JPS562667A/ja
Publication of JPS562667A publication Critical patent/JPS562667A/ja
Publication of JPS6145395B2 publication Critical patent/JPS6145395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP7683479A 1979-06-20 1979-06-20 Semiconductor device and manufacture thereof Granted JPS562667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7683479A JPS562667A (en) 1979-06-20 1979-06-20 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7683479A JPS562667A (en) 1979-06-20 1979-06-20 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS562667A true JPS562667A (en) 1981-01-12
JPS6145395B2 JPS6145395B2 (enrdf_load_stackoverflow) 1986-10-07

Family

ID=13616699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7683479A Granted JPS562667A (en) 1979-06-20 1979-06-20 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS562667A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166075A (en) * 1981-04-07 1982-10-13 Hitachi Ltd Semiconductor device
JPS62117370A (ja) * 1985-11-15 1987-05-28 Semiconductor Res Found ダブルゲ−ト静電誘導サイリスタの製造方法
JPS634680A (ja) * 1986-06-24 1988-01-09 Matsushita Electric Works Ltd 静電誘導形半導体装置
US5825092A (en) * 1996-05-20 1998-10-20 Harris Corporation Integrated circuit with an air bridge having a lid

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399879A (en) * 1977-02-14 1978-08-31 Hitachi Ltd Junction-type field effect thyristor
JPS53137675A (en) * 1977-05-07 1978-12-01 Mitsubishi Electric Corp Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399879A (en) * 1977-02-14 1978-08-31 Hitachi Ltd Junction-type field effect thyristor
JPS53137675A (en) * 1977-05-07 1978-12-01 Mitsubishi Electric Corp Manufacture for semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166075A (en) * 1981-04-07 1982-10-13 Hitachi Ltd Semiconductor device
JPS62117370A (ja) * 1985-11-15 1987-05-28 Semiconductor Res Found ダブルゲ−ト静電誘導サイリスタの製造方法
JPS634680A (ja) * 1986-06-24 1988-01-09 Matsushita Electric Works Ltd 静電誘導形半導体装置
US5825092A (en) * 1996-05-20 1998-10-20 Harris Corporation Integrated circuit with an air bridge having a lid

Also Published As

Publication number Publication date
JPS6145395B2 (enrdf_load_stackoverflow) 1986-10-07

Similar Documents

Publication Publication Date Title
JPS5522840A (en) Semiconductor switching element and manufacturing method thereof
JPS6489365A (en) Semiconductor device
JPS5586151A (en) Manufacture of semiconductor integrated circuit
JPS55102267A (en) Semiconductor control element
JPS562667A (en) Semiconductor device and manufacture thereof
KR970054357A (ko) 반도체장치 및 그 제조방법
JPS5473585A (en) Gate turn-off thyristor
JPS54112182A (en) Semiconductor device
JPS57166078A (en) Semiconductor device
JPS5778171A (en) Thyristor
JPS5539667A (en) Turn off thyristor
JPS55166965A (en) Junction type fet
JPS55162263A (en) Semiconductor device
JPS56108263A (en) Manufacture of semiconductor device
JPS5529175A (en) Planar type transistor
JPS5648167A (en) Semiconductor device
JPS564275A (en) Semiconductor device
JPS54120588A (en) Gate turn-off thyristor
JPS56135965A (en) Semiconductor device
JPS641284A (en) Zener diode
JPS5658258A (en) Semiconductor integrated circuit
JPS5612779A (en) Zener diode
JPS5563879A (en) Semiconductor device
JPS6431434A (en) Semiconductor integrated circuit
JPS5632763A (en) Semiconductor device