JPS5623783A - Formation of electrode for semiconductor device - Google Patents
Formation of electrode for semiconductor deviceInfo
- Publication number
- JPS5623783A JPS5623783A JP9894879A JP9894879A JPS5623783A JP S5623783 A JPS5623783 A JP S5623783A JP 9894879 A JP9894879 A JP 9894879A JP 9894879 A JP9894879 A JP 9894879A JP S5623783 A JPS5623783 A JP S5623783A
- Authority
- JP
- Japan
- Prior art keywords
- nonexposed
- electrode
- section
- resist film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9894879A JPS5623783A (en) | 1979-08-01 | 1979-08-01 | Formation of electrode for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9894879A JPS5623783A (en) | 1979-08-01 | 1979-08-01 | Formation of electrode for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5623783A true JPS5623783A (en) | 1981-03-06 |
JPS6222463B2 JPS6222463B2 (ja) | 1987-05-18 |
Family
ID=14233315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9894879A Granted JPS5623783A (en) | 1979-08-01 | 1979-08-01 | Formation of electrode for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5623783A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58153375A (ja) * | 1982-03-08 | 1983-09-12 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPS6177370A (ja) * | 1984-09-21 | 1986-04-19 | Fujitsu Ltd | パタ−ン形成方法 |
JPS61228622A (ja) * | 1985-04-02 | 1986-10-11 | Mitsubishi Electric Corp | 電極パタ−ンの形成方法 |
US4621415A (en) * | 1985-06-14 | 1986-11-11 | Litton Systems, Inc. | Method for manufacturing low resistance sub-micron gate Schottky barrier devices |
JPH0265139A (ja) * | 1988-08-30 | 1990-03-05 | Toshiba Corp | 半導体装置用電極の形成方法 |
JPH02165623A (ja) * | 1988-12-20 | 1990-06-26 | Nec Corp | 微細電極の形成法 |
WO1997020342A1 (en) * | 1995-11-29 | 1997-06-05 | Simage Oy | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
JP2007514201A (ja) * | 2003-12-12 | 2007-05-31 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | フォトレジスト層の表面にくぼみを形成する方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5251866A (en) * | 1975-10-23 | 1977-04-26 | Fujitsu Ltd | Production of metal electrode |
JPS5264285A (en) * | 1975-11-21 | 1977-05-27 | Hitachi Ltd | Production of compositemetal layer of integrated circuit device |
JPS5394767A (en) * | 1977-01-31 | 1978-08-19 | Hitachi Ltd | Manufacture of semiconductor device |
-
1979
- 1979-08-01 JP JP9894879A patent/JPS5623783A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5251866A (en) * | 1975-10-23 | 1977-04-26 | Fujitsu Ltd | Production of metal electrode |
JPS5264285A (en) * | 1975-11-21 | 1977-05-27 | Hitachi Ltd | Production of compositemetal layer of integrated circuit device |
JPS5394767A (en) * | 1977-01-31 | 1978-08-19 | Hitachi Ltd | Manufacture of semiconductor device |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58153375A (ja) * | 1982-03-08 | 1983-09-12 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPS6262071B2 (ja) * | 1982-03-08 | 1987-12-24 | Oki Electric Ind Co Ltd | |
JPS6177370A (ja) * | 1984-09-21 | 1986-04-19 | Fujitsu Ltd | パタ−ン形成方法 |
JPS61228622A (ja) * | 1985-04-02 | 1986-10-11 | Mitsubishi Electric Corp | 電極パタ−ンの形成方法 |
US4621415A (en) * | 1985-06-14 | 1986-11-11 | Litton Systems, Inc. | Method for manufacturing low resistance sub-micron gate Schottky barrier devices |
JPH0265139A (ja) * | 1988-08-30 | 1990-03-05 | Toshiba Corp | 半導体装置用電極の形成方法 |
JPH02165623A (ja) * | 1988-12-20 | 1990-06-26 | Nec Corp | 微細電極の形成法 |
WO1997020342A1 (en) * | 1995-11-29 | 1997-06-05 | Simage Oy | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
US6046068A (en) * | 1995-11-29 | 2000-04-04 | Simage Oy | Forming contacts on semiconductor substrates radiation detectors and imaging devices |
JP2007514201A (ja) * | 2003-12-12 | 2007-05-31 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | フォトレジスト層の表面にくぼみを形成する方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6222463B2 (ja) | 1987-05-18 |
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