JPS5621370A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS5621370A
JPS5621370A JP9674679A JP9674679A JPS5621370A JP S5621370 A JPS5621370 A JP S5621370A JP 9674679 A JP9674679 A JP 9674679A JP 9674679 A JP9674679 A JP 9674679A JP S5621370 A JPS5621370 A JP S5621370A
Authority
JP
Japan
Prior art keywords
shallow
oxide film
layer
gate
deep
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9674679A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0243339B2 (enrdf_load_stackoverflow
Inventor
Kunikazu Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9674679A priority Critical patent/JPS5621370A/ja
Publication of JPS5621370A publication Critical patent/JPS5621370A/ja
Publication of JPH0243339B2 publication Critical patent/JPH0243339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP9674679A 1979-07-31 1979-07-31 Mos transistor Granted JPS5621370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9674679A JPS5621370A (en) 1979-07-31 1979-07-31 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9674679A JPS5621370A (en) 1979-07-31 1979-07-31 Mos transistor

Publications (2)

Publication Number Publication Date
JPS5621370A true JPS5621370A (en) 1981-02-27
JPH0243339B2 JPH0243339B2 (enrdf_load_stackoverflow) 1990-09-28

Family

ID=14173238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9674679A Granted JPS5621370A (en) 1979-07-31 1979-07-31 Mos transistor

Country Status (1)

Country Link
JP (1) JPS5621370A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190049A (ja) * 1986-02-17 1987-08-20 Kita Nippon Shokuhin Kogyo Kk センタ−入りおかきの製法
JPS63503025A (ja) * 1986-01-24 1988-11-02 サムソン　エレクトロニクス　コーポレーション　リミテッド Ｃｍｏｓ構造を形成する方法
US5172200A (en) * 1990-01-12 1992-12-15 Mitsubishi Denki Kabushiki Kaisha MOS memory device having a LDD structure and a visor-like insulating layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386177A (en) * 1977-01-07 1978-07-29 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS53112069A (en) * 1977-03-11 1978-09-30 Nippon Telegr & Teleph Corp <Ntt> Production of mis transistor
JPS5424582A (en) * 1977-07-27 1979-02-23 Hitachi Ltd Manufacture for mis semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386177A (en) * 1977-01-07 1978-07-29 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS53112069A (en) * 1977-03-11 1978-09-30 Nippon Telegr & Teleph Corp <Ntt> Production of mis transistor
JPS5424582A (en) * 1977-07-27 1979-02-23 Hitachi Ltd Manufacture for mis semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63503025A (ja) * 1986-01-24 1988-11-02 サムソン　エレクトロニクス　コーポレーション　リミテッド Ｃｍｏｓ構造を形成する方法
JPS62190049A (ja) * 1986-02-17 1987-08-20 Kita Nippon Shokuhin Kogyo Kk センタ−入りおかきの製法
US5172200A (en) * 1990-01-12 1992-12-15 Mitsubishi Denki Kabushiki Kaisha MOS memory device having a LDD structure and a visor-like insulating layer

Also Published As

Publication number Publication date
JPH0243339B2 (enrdf_load_stackoverflow) 1990-09-28

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